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US 2004/0164415 A1Published application
Electrode employing nitride-based semiconductor of III-V group compound, and producing method thereof
AssigneeSharp Kabushiki Kaisha
InventorNobuaki Teraguchi
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Abstract
An electrode employing a nitride-based semiconductor of III-V group compound having a favorable ohmic characteristic and a producing method thereof are provided. The electrode includes a nitride-based semiconductor layer of III-V group compound, an electrode metal, and a metal oxide inserted therebetween. The metal oxide is preferably an oxide of metal element(s) permitting formation of a nitride semiconductor.
Claims6
An electrode employing a nitride-based semiconductor of III-V group compound, comprising:
- a nitride-based semiconductor layer of III-V group compound;
- an electrode metal;
- and
- a metal oxide inserted between said nitride-based semiconductor layer of III-V group compound and said electrode metal.
1 more element
A producing method of an electrode employing a nitride-based semiconductor of III-V group compound, comprising the steps of:
- forming a nitride-based semiconductor layer of III-V group compound;
- forming an electrode metal;
- and
- inserting a metal oxide between said nitride-based semiconductor layer of III-V group compound and said electrode metal in an oxygen-deficient state.
1 more element
Dependencies are inferred from the claim text.