Soft error resistant semiconductor device
AssigneeAdvanced Micro Devices, Inc.
InventorsGisela Schammler, Mathias Bottcher, Frank Kuechenmeister, Daniel Gehre, Ehrenfried Zschech
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Abstract
A semiconductor device comprises a material layer adapted to efficiently stop alpha particles that are substantially generated within a solder bump of a flip chip device. The materials used for stopping the alpha particles are compatible with standard back-end processing and do not degrade adhesion of the solder bump to the remaining substrate. Moreover, a low electrical resistance is maintained and heat dissipation may be improved.
Claims29
A semiconductor device, comprising:
- a substrate including a contact pad;
- a solder bump formed on said contact pad;
- and
- an absorption layer disposed between said contact pad and said solder bump, said absorption layer having a thickness that is configured to substantially stop alpha particles of at least 5.4 MeV.
The semiconductor device of claim 8, wherein said spacing is filled with a dielectric material.
A semiconductor device, comprising:
- a substrate including a contact pad;
- a solder bump formed on said contact pad;
- and
- an underbump metallization disposed between said contact pad and said solder bump, said underbump metallization substantially preventing diffusion of solder bump material into said substrate and providing adhesion of said solder bump to said substrate, wherein said underbump metallization has a thickness sufficient to stop alpha particles of approximately 5.4 MeV.
A semiconductor device, comprising:
- a substrate including a functional element;
- a multilayer metal stack formed over said substrate, wherein said multilayer metal stack has an intrinsic alpha particle emission rate of less than 0.001 alpha particles/cm2 an hour and a thickness of 1 μm and more;
- and
- a solder bump formed on said multilayer metal stack.
A method of forming a soft error reduced semiconductor device, the method comprising:
- providing a substrate having formed thereon a circuit element;
- forming a contact pad over said substrate;
- forming an electrically conductive absorption layer over said contact pad with a predefined thickness allowing the stoppage of alpha particles with an energy of approximately 5.4 MeV;
- and
- forming a solder bump over said absorption layer.
Dependencies are inferred from the claim text.