Ion implantation with multiple concentration levels
AssigneeXerox Corporation
InventorsAlan D. Raisanen, Shelby F. Nelson
Life of this patent
Estimating the term…
Abstract
A method that includes providing a semiconductor substrate having a mask on a surface thereof. The mask includes a first region having no masking elements and a second region having a plurality of masking elements. Each of the plurality of masking elements has a dimension that is equal to a first length, the first length less than twice a diffusion length of a dopant. The method further includes bombarding the semiconductor substrate and masking element with ions of the dopant. The ions form a first impurity concentration in the first region and a second impurity concentration in the second region.
Claims20
A method comprising:
- providing a semiconductor substrate having a mask on a surface thereof, the mask including a first region having no masking elements and a second region having a plurality of masking elements, each of the plurality of masking elements having a dimension that is equal to a first length, the first length less than twice a diffusion length of a dopant;
- and
- bombarding the semiconductor substrate and masking element with ions of the dopant, the ions forming a first impurity concentration in the first region and a second impurity concentration in the second region.
A semiconductor product produced by a method comprising:
- providing a semiconductor substrate having a mask on a surface thereof, the mask including a first region having no masking elements and a second region having a plurality of masking elements, each of the plurality of masking elements having a dimension that is equal to a first length, the first length less than twice a diffusion length of a dopant;
- and
- bombarding the semiconductor substrate and masking element with ions of the dopant, the ions forming a first impurity concentration in the first region and a second impurity concentration in the second region.
A semiconductor substrate having a mask on a surface thereof, the mask including a first region having no masking elements and a second region having a plurality of masking elements, each of the plurality of masking elements having a dimension that is equal to a first length, the first length less than twice a diffusion length of a dopant, the diffusion length of the dopant defined as a length of diffusion under heating of the semiconductor substrate to a temperature exceeding that of an ion bombardment step.
Dependencies are inferred from the claim text.