Field effect transistor and method of manufacturing the same
AssigneeNEC Compound Semiconductor Devices, Ltd.
InventorKouji Ishikura
Life of this patent
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Abstract
A field effect transistor includes: a source electrode and a drain electrode formed above a semiconductor active layer; an insulating film formed between the source electrode and the drain electrode above the semiconductor active layer so as to have an opening in which its side wall on a drain electrode side includes a tapered portion formed so as to be inclined from a plane perpendicular to an upper surface of the semiconductor active layer toward the drain electrode; and a gate electrode contacted to the semiconductor active layer through the opening so as to cover at least the side wall on the drain electrode side. Thus, there is provided the field effect transistor which has high breakdown voltage and high linear gain characteristics.
Claims9
A field effect transistor comprising:
- a drain electrode and a source electrode formed above a semiconductor active layer;
- an insulating film formed on said semiconductor active layer between said drain electrode and said source electrode;
- and a gate electrode formed in an opening of said insulating film formed between said drain electrode and said source electrode,
- wherein a side wall of said opening of said insulating film where said gate electrode touches said insulating film, on a side of said drain electrode, includes an tapered portion formed so as to be inclined from a plane perpendicular to an upper surface of said semiconductor active layer toward said drain electrode.
A transistor comprising a channel layer, an insulating layer covering said channel layer, an opening selectively formed in said insulating layer to expose a part of said channel layer, and a gate electrode having a Schottky barrier junction with said part of said channel layer through said opening and elongated over said insulating layer, said opening having a tapered side wall that spreads upwardly from said channel layer.
A method of manufacturing a field effect transistor having a gate electrode between a drain electrode and a source electrode formed above a semiconductor active layer, comprising:
- forming an opening for exposure of a part of the semiconductor active layer in an insulating film formed between said drain electrode and said source electrode formed above said semiconductor active layer such that a sidewall of said opening, on a side of said drain electrode, includes a tapered portion formed so as to be inclined from a plane perpendicular to an upper surface of said semiconductor active layer to the side of said drain electrode;
- and
- forming said gate electrode so as to cover at least said tapered portion and said upper surface of said semiconductor active layer in said opening.
Dependencies are inferred from the claim text.