SOI-LDMOS device with integral voltage sense electrodes

A method for determining a voltage differential between a source and a drain in a semiconductor device, comprising:

• (a) dividing a field plate of the semiconductor device into a plurality of sub-field plates;
• (b) providing an external contact electrode connected to each of the plurality of sub-field plates;
• (c) connecting a first analytical circuit to a first external contact tap;
• (d) connecting a second analytical circuit to a second external contact tap;
• and
• (e) determining an output voltage at each of the external contact electrodes.

A method for protecting a semiconductor device from damage due to voltage overload, comprising the steps of:

• (a) providing a plurality of sub-field plates in the semiconductor device;
• (b) providing an external contact electrode connected to each of the sub-field plates;
• (c) connecting a first analytical circuit to a first of the external contact electrodes;
• (d) connecting a second analytical circuit to a second of the external contact electrodes;
• an
• (e) determining an instantaneous output voltage differential through the first analytical circuit;
• (f) determining a change in output voltage differential as a function of time through the second analytical circuit;
• and
• (g) if the instantaneous output voltage or the change in output voltage as a function of time is in excess of an established value therefor, disconnecting power from the semiconductor device.