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US 2004/0164339 A1Published application
Capacitor and method of manufacturing a capacitor
AssigneeInfineon Technologies North America Corp.
InventorsPetra Felsner, Thomas Schafbauer, Uwe Kerst, Hans-Joachim Barth, Erdem Kaltalioglu
Life of this patent
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Abstract
Semiconductor devices having capacitors formed of a high-k dielectric and a pair of interconnections on either side of the dielectric are provided along with methods of fabricating such semiconductor devices. The interconnections comprise a via and a metal layer.
Claims26
A capacitor, comprising:
- a first electrode formed in a semiconductor substrate, the first electrode including a first via and a metal layer connected to the first via, the first electrode being in electrical contact with a first region of the semiconductor substrate;
- a second electrode formed in the semiconductor substrate, the second electrode including a second via and a metal layer connected to the second via, the second electrode being in electrical contact with a second region of the semiconductor substrate;
- and
- a high-k dielectric disposed between the first electrode and the second electrode.
1 more element
A semiconductor device, comprising:
- (a) a semiconductor substrate;
- (b) a first electronic device formed in a first region of the semiconductor substrate;
- (c) a second electronic device formed in a second region of the semiconductor substrate;
- (d) a first electrode formed in a third region of the semiconductor substrate, the first electrode including a first via and a metal layer connected to the first via, the first electrode being in electrical contact with the first electronic device;
- (e) a second electrode formed in a fourth region of the semiconductor substrate, the second electrode including a second via and a metal layer connected to the second via, the second electrode being in electrical contact with the second electronic device;
- and
- (f) a high-k dielectric disposed between the first electrode and the second electrode, wherein the first electrode, the second electrode and the high-k dielectric comprise a capacitor.
4 more elements
A method of fabricating a capacitor, comprising:
- (a) forming a first electrode on a first portion of a semiconductor substrate, the first electrode including a first via and a metal layer and being in electrical contact with a first region of the semiconductor substrate;
- (b) forming a second electrode on a second portion of the semiconductor substrate, the second electrode including a second via and a metal layer and being in electrical contact with a second region of the semiconductor substrate;
- and
- (c) forming a high-k dielectric between the first and second electrodes.
1 more element
A method of fabricating a semiconductor device, comprising:
- (a) forming a first electronic device in a first region of a semiconductor substrate;
- (b) forming a second electronic device in a second region of the semiconductor substrate;
- (c) forming a first electrode in a third region of the semiconductor device, the first electrode including a first via and a metal layer, the first electrode being in electrical contact with the first electronic device;
- (d) forming a second electrode in a fourth region of the semiconductor device, the second electrode including a second via and a metal layer, the second electrode being in electrical contact with the second electronic device;
- and
- (e) forming a high-k dielectric between the first and second electrodes.
3 more elements
Dependencies are inferred from the claim text.