Semiconductor device and method for fabricating the same
OwnerHaruhiko Koyamainventor
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Abstract
A semiconductor device according to an embodiment of the invention includes: a trench capacitor formed in a trench in a semiconductor substrate; a transistor for driving the trench capacitor; a semi-cylindrical semiconductor layer in an upper part of the trench constructing a part of a path electrically connecting the trench capacitor and the transistor; and a low-resistant layer buried in the semi-cylindrical semiconductor layer and having resistivity lower than that of the semi-cylindrical semiconductor layer.
Claims16
A semiconductor device comprising:
- a trench capacitor formed in a trench in a semiconductor substrate;
- a transistor for driving said trench capacitor;
- a semi-cylindrical semiconductor layer in an upper part of said trench constructing a part of a path electrically connecting said trench capacitor and said transistor;
- and
- a low-resistant layer buried in said semi-cylindrical semiconductor layer and having resistivity lower than that of said semi-cylindrical semiconductor layer.
A method for fabricating a semiconductor device burying a low-resistant layer having resistivity lower than that of a semi-cylindrical semiconductor layer in the semi-cylindrical semiconductor layer in an upper part of a trench constructing a part of a path electrically connecting a trench capacitor formed in said trench in a semiconductor substrate and a transistor for driving said trench capacitor.
Dependencies are inferred from the claim text.