Capacitor element, manufacturing method therefor, semiconductor device substrate, and semiconductor device

A method of manufacturing a capacitor element, comprising the steps of:

• applying on a surface of a base material a base made of a resin whose coefficient of linear expansion is adjusted in accordance with a coefficient of linear expansion of a semiconductor element mounted on said capacitor element;
• forming vias in the base;
• forming a conductive layer on a top surface of the base;
• patterning the conductive layer so as to form terminals filling in the vias and lower electrodes extending to the top surface of the base;
• forming a dielectric layer on said lower electrodes;
• forming a conductive layer on a top surface of the dielectric layer;
• and
• patterning the conductive layer so as to form on the dielectric layer an upper electrode opposing said lower electrodes and so as to form a terminal having an exposed top surface.

A semiconductor device substrate on which a semiconductor element may be mounted, said semiconductor device substrate comprising:

• a substrate body having a bottom surface that serves as a mounting surface in which external connection terminals are arranged;
• and
• a capacitor element including:
• a base made of a resin whose coefficient of linear expansion is adjusted in accordance with the semiconductor element to be mounted;
• a capacitor part including two opposing electrodes and a dielectric layer interposed therebetween;
• a plurality of terminals in a top surface of the capacitor element;
• and
• a plurality of terminals in a bottom surface of the capacitor element,
• the capacitor element being embedded in the substrate body, a top surface of the capacitor element being exposed at a top surface of the substrate body and serving as a surface on which the semiconductor element may be mounted.