Films doped with carbon for use in integrated circuit technology
AssigneeMicron Technology, Inc.
InventorsRonald A. Weimer, John T. Moore
Life of this patent
Estimating the term…
Abstract
The invention pertains to films comprising silicon, oxygen and carbon and the use of the films in integrated circuit technology, such as capacitor constructions, DRAM constructions, semiconductive material assemblies, etching processes, and methods for forming capacitors, DRAMs and semiconductive material assemblies.
Claims17
A wordline assembly comprising;
- a conductive gate having a sidewall;
- and
- a spacer next to the sidewall of the conductive gate, wherein the spacer comprises silicon, about 2% to about 20% by weight carbon, and about 5% to about 75% by weight oxygen.
A capacitor assembly comprising a storage node extending within an insulative layer, wherein the storage node is next to a layer comprising silicon, about 2% to about 20% by weight carbon and about 5% to about 75% by weight oxygen;
- a second electrode proximate the storage node;
- and
- a dielectric layer between the storage node and the second electrode.
A dynamic random access assembly comprising:
- a substrate,
- a wordline over the substrate, wherein the wordline has a sidewall;
- a first node and a second node proximate the wordline, wherein the first node is in gated electrical connection with the second node via the wordline;
- a spacer next to the sidewall of the wordline, wherein the spacer comprises silicon, about 2% to about 20% by weight carbon, and about 5% to about 75% by weight oxygen;
- an insulative layer over the spacer, the wordline, the first node and the second node;
- a capacitor assembly in electrical connection with the first node;
- and
- a bit line contact in electrical connection with the second node.
An assembly comprising
- a substrate;
- a layer comprising silicon, about 2% to about 20% by weight carbon and about 5% to about 75% by weight oxygen;
- and
- a photoresist masking layer.
Dependencies are inferred from the claim text.