Methods of manufacturing low cross-talk electrically programmable resistance cross point memory structures
AssigneeSharp Laboratories of America, Inc.
InventorsSheng Teng Hsu, Wei-Wei Zhuang
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Abstract
Low cross talk resistive cross point memory devices are provided, along with methods of manufacture and use. The memory device comprises a bit formed using a perovskite material interposed at a cross point of an upper electrode and lower electrode. Each bit has a resistivity that can change through a range of values in response to application of one, or more, voltage pulses. Voltage pulses may be used to increase the resistivity of the bit, decrease the resistivity of the bit, or determine the resistivity of the bit. Memory circuits are provided to aid in the programming and read out of the bit region.
Claims20
A memory structure comprising;
- a). a substrate;
- b) a plurality of bottom electrodes overlying the substrate;
- c) a plurality of top electrodes overlying the bottom electrodes, wherein the top electrodes cross over the bottom electrodes forming a cross point at each cross over location;
- and
- d) a perovskite material interposed between the plurality of top electrodes and the plurality of bottom electrodes at each cross point.
A method of manufacturing a memory structure comprising the steps of:
- a) providing a semiconductor substrate;
- b) forming a plurality of bottom electrodes;
- c) depositing an isolation material overlying the bottom electrodes;
- d) etching an opening to the bottom electrodes;
- e) depositing a layer of perovskite material overlying the bottom electrodes and the isolation material;
- f) polishing the layer of perovskite material, whereby perovskite material remains in the openings to form resistive bits, and
- g) forming a plurality of top electrodes overlying the layer of perovskite material.
Dependencies are inferred from the claim text.