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AssigneeKabushiki Kaisha Toshiba
InventorsIzumi Hirano, Masato Koyama, Akira Nishiyama
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A good interface characteristic can be maintained, and a leakage current of a dielectric film can be decreased. A semiconductor device according to one aspect of the present invention includes: a semiconductor substrate; a gate dielectric film containing at least nitrogen and a metal, the gate dielectric film being formed on the semiconductor substrate, and including a first layer region contacting the semiconductor substrate, a second layer region located at a side opposite to that of the first layer region in the gate dielectric film, and a third layer region located between the first and second layer regions, a maximum value of a nitrogen concentration in the third layer region being higher than maximum values thereof in the first and second layer regions; a gate electrode contacting the second layer region; and a pair of source and drain regions formed at both sides of the gate dielectric film in the semiconductor substrate.
A semiconductor device comprising:
A method of manufacturing a semiconductor device comprising a metal silicate layer formed on a semiconductor substrate, the metal silicate layer containing at least nitrogen and including a first layer region located at a side of the semiconductor substrate, a second layer region located at a side opposite to that of the first layer region, and a third layer region located between the first and second layer regions, the method comprising:
A method of manufacturing a semiconductor device comprising a metal oxide layer formed on a semiconductor substrate, the metal oxide layer containing at least nitrogen and including a first layer region located at a side of the semiconductor substrate, a second layer region located at a side opposite to that of the first layer region, and a third layer region located between the first and second layer regions, the method comprising:
Dependencies are inferred from the claim text.