Method of horizontally growing carbon nanotubes and field effect transistor using the carbon nanotubes grown by the method

A method of horizontally growing carbon nanotubes, the method comprising the steps of:

• (i) forming masks at predetermined locations on a first substrate;
• (j) forming a catalyst pattern on the first substrate and the masks formed on the first substrate;
• (k) forming a vertical growth preventing layer on the first substrate, which prevents the carbon nanotubes from growing in a vertical direction;
• (l) eliminating the masks from the vertical growth preventing layer and the first substrate to form apertures and expose the catalyst pattern;
• and
• (m) synthesizing the carbon nanotubes at exposed locations of the catalyst pattern in order to grow the carbon nanotubes in the horizontal direction.

A method of horizontally growing carbon nanotubes, the method comprising the steps of:

• forming a catalyst pattern in a predetermined two-dimensional arrangement on a first substrate;
• fabricating a second substrate for preventing vertical growth of the carbon nanotubes having holes in a predetermined arrangement;
• placing the second substrate for preventing vertical growth of the carbon nanotubes over the first substrate having the catalyst pattern with a predetermined gap;
• and
• synthesizing the carbon nanotubes at the catalyst pattern, so as to horizontally grow the carbon nanotubes.

A method of horizontally growing carbon nanotubes, the method comprising the steps of:

• forming a catalyst in a shape of nanodots or nanowires on a substrate;
• patterning a growth preventing layer on the catalyst in the shape of nanodots or nanowires, so as to prevent the nanodots or nanowires from growing in a vertical direction;
• and
• selectively growing the carbon nanotubes in a horizontal direction at the nanodots or nanowires.

A method of horizontally growing carbon nanotubes, the method comprising the steps of:

• forming catalysts in a shape of nanowires on a substrate;
• forming a growth preventing layer on the catalysts having the shape of nanowires by a semiconductor process including a lithography process, the growth preventing layer being spaced from the substrate with a predetermined gap;
• eliminating a portion of the catalysts having the shape of nanowires in an area at which the growth preventing layer is not formed, by means of a wet etching;
• and
• growing the carbon nanotubes in a horizontal direction between the catalysts formed under the growth preventing layer spaced from the substrate with a predetermined gap, by means of a chemical vapor deposition method.