Structures with planar strained layers
AssigneeMassachusetts Institute of Technology
InventorsMinjoo L. Lee, Christopher W. Leitz, Eugene A. Fitzgerald
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Abstract
A structure and a method for forming the structure, the method including forming a compressively strained semiconductor layer, the compressively strained layer having a strain greater than or equal to 0.25%. A tensilely strained semiconductor layer is formed over the compressively strained layer. The compressively strained layer is substantially planar, having a surface roughness characterized in (i) having an average wavelength greater than an average wavelength of a carrier in the compressively strained layer or (ii) having an average height less than 10 nm.
Claims44
A method for forming a structure, the method including:
- forming a compressively strained semiconductor layer, the compressively strained layer having a strain greater than or equal to 0.25%;
- and
- forming a tensilely strained semiconductor layer over the compressively strained layer,
- wherein the compressively strained layer is substantially planar, having a surface roughness characterized by at least one of (i) an average roughness wavelength greater than an average wavelength of a carrier in the compressively strained layer and (ii) an average roughness height less than 10 nm.
A structure comprising:
- a compressively strained semiconductor layer having a strain greater than or equal to 0.25%;
- and
- a tensilely strained semiconductor layer disposed over the compressively strained layer,
- wherein the compressively strained layer is substantially planar, having a surface roughness characterized by at least one of (i) an average roughness wavelength greater than an average wavelength of a carrier in the compressively strained layer and (ii) an average roughness height less than 10 nm.
Dependencies are inferred from the claim text.