Method of manufacturing a semiconductor light emitting device, semiconductor light emitting device, method of manufacturing a semiconductor device, semiconductor device, method of manufacturing a device, and device

A semiconductor light emitting device manufactured by:

• growing nitride III-V compound semiconductor layers forming a light emitting device structure on a nitride III-V compound semiconductor substrate in which a plurality of second regions having a second average dislocation density higher than a first average dislocation density align regularly in a first region made of a crystal and having the first average dislocation density;
• and
• dicing the nitride III-V compound semiconductor substrate having the nitride III-V compound semiconductor layers grown thereon along border lines including at least neighboring two of the second regions.

A semiconductor light emitting device including nitride III-V compound semiconductor layers grown to form a light emitting device structure on a nitride III-V compound substrate in which a plurality of second regions having a second average dislocation density higher than a first average dislocation density align regularly in a first region made of a crystal and having the first average dislocation density, in which at least one of said second regions resides on an end surface or a corner of the nitride III-V compound semiconductor substrate.

A method of manufacturing a semiconductor device by growing nitride III-V compound semiconductor layers forming a device structure on a nitride III-V compound semiconductor substrate in which a plurality of second regions having a second average dislocation density higher than a first average dislocation density align regularly in a first region made of a crystal and having the first average dislocation density, comprising:

• defining a device region on the nitride III-V compound semiconductor substrate such that the device region does not include the second regions substantially.

A semiconductor device manufactured by:

• growing nitride III-V compound semiconductor layers forming a device structure on a nitride III-V compound semiconductor substrate in which a plurality of second regions having a second average dislocation density higher than a first average dislocation density align regularly in a first region made of a crystal and having the first average dislocation density;
• and
• dicing the nitride III-V compound semiconductor substrate having the nitride III-V compound semiconductor layers grown thereon along border lines including at least neighboring two of the second regions.

A semiconductor device including nitride III-V compound semiconductor layers grown to form a device structure on a nitride III-V compound semiconductor substrate in which a plurality of second regions having a second average dislocation density higher than a first average dislocation density align regularly in a first region made of a crystal and having the first average dislocation density, in which at least one of said second regions resides on an end surface or a corner of the nitride III-V compound semiconductor substrate.

A method of manufacturing a semiconductor light emitting device by growing semiconductor layers forming a light emitting device structure on a semiconductor substrate in which a plurality of second regions having a second average dislocation density higher than a first average dislocation density align regularly in a first region made of a crystal and having the first average dislocation density, comprising:

• defining a device region on the semiconductor substrate such that the device region does not include the second regions substantially.

A semiconductor light emitting device manufactured by:

• growing semiconductor layers forming a light emitting device structure on a semiconductor substrate in which a plurality of second regions having a second average dislocation density higher than a first average dislocation density align regularly in a first region made of a crystal and having the first average dislocation density;
• and
• dicing the semiconductor substrate having the semiconductor layers grown thereon along border lines including at least neighboring two of the second regions.

A semiconductor light emitting device including semiconductor layers grown to form a light emitting device structure on a semiconductor substrate in which a plurality of second regions having a second average dislocation density higher than a first average dislocation density align regularly in a first region made of a crystal and having the first average dislocation density, in which at least one of said second regions resides on an end surface or a corner of the semiconductor substrate.

A method of manufacturing a semiconductor device by growing semiconductor layers forming a device structure on a semiconductor substrate in which a plurality of second regions having a second average dislocation density higher than a first average dislocation density align regularly in a first region made of a crystal and having the first average dislocation density, comprising:

• defining a device region on the semiconductor substrate such that the device region does not include the second regions substantially.

A semiconductor device manufactured by:

• growing semiconductor layers forming a device structure on a semiconductor substrate in which a plurality of second regions having a second average dislocation density higher than a first average dislocation density align regularly in a first region made of a crystal and having the first average dislocation density;
• and
• dicing the semiconductor substrate having the semiconductor layers grown thereon along border lines including at least neighboring two of the second regions.

A semiconductor device including semiconductor layers grown to form a device structure on a semiconductor substrate in which a plurality of second regions having a second average dislocation density higher than a first average dislocation density align regularly in a first region made of a crystal and having the first average dislocation density, in which at least one of said second regions resides on an end surface or a corner of the semiconductor substrate.

A method of manufacturing a device by growing layers forming a device structure on a substrate in which a plurality of second regions having a second average dislocation density higher than a first average dislocation density align regularly in a first region made of a crystal and having the first average dislocation density, comprising:

• defining a device region on the substrate such that the device region does not include the second regions substantially.

A device manufactured by:

• growing layers forming a device structure on a substrate in which a plurality of second regions having a second average dislocation density higher than a first average dislocation density align regularly in a first region made of a crystal and having the first average dislocation density;
• and
• dicing the substrate having the layers grown thereon along border lines including at least neighboring two of the second regions.

A device including layers grown to form a device structure on a substrate in which a plurality of second regions having a second average dislocation density higher than a first average dislocation density align regularly in a first region made of a crystal and having the first average dislocation density, in which at least one of said second regions resides on an end surface or a corner of the substrate.

A method of manufacturing a device by growing layers forming a device structure on a substrate in which a plurality of second regions having a second average dislocation density higher than a first average dislocation density align regularly in a first region made of a crystal and having the first average dislocation density, comprising:

• defining a device region on the substrate such that an active region of the device does not include the second regions.

A device including layers grown to form a device structure on a substrate in which a plurality of second regions having a second average dislocation density higher than a first average dislocation density align regularly in a first region made of a crystal and having the first average dislocation density, in which at least one of said second regions resides inside the substrate or on an end surface or a corner of the substrate, and an active region of the device does not include the second regions.

A method of manufacturing a device by growing layers forming a device structure on a substrate in which a plurality of second regions having a second average dislocation density higher than a first average dislocation density regularly align in a first region having the first average dislocation density in first intervals in a first direction and in second intervals smaller than the first intervals in a second direction normal to the first direction, comprising:

• defining a device region on the substrate such that the device region does not substantially include seven or more rows of the second regions in the second direction, and an active region of the device does not include the second regions.

A device manufactured by growing layers forming a device structure on a substrate in which a plurality of second regions having a second average dislocation density higher than a first average dislocation density regularly align in a first region having the first average dislocation density in first intervals in a first direction and in second intervals smaller than the first intervals in a second direction normal to the first direction, in which the substrate does not substantially include seven or more rows of the second regions and an active region of the device does not include the second regions.

A method of manufacturing a device by growing layers forming a device structure on a substrate in which a plurality of second regions having a second average dislocation density higher than a first average dislocation density regularly align in a first region having the first average dislocation density in first intervals in a first direction and in second intervals smaller than the first intervals in a second direction normal to the first direction, comprising:

• defining a device region on the substrate such that the first interval is 50 μm or more, one or more rows of the second regions in the second direction are included, and an active region of the device does not include the second regions.

A device manufactured by growing layers forming a device structure on a substrate in which a plurality of second regions having a second average dislocation density higher than a first average dislocation density regularly align in a first region having the first average dislocation density in first intervals in a first direction and in second intervals smaller than the first intervals in a second direction normal to the first direction, in which the first interval is 50 μm or more, one or more rows of the second regions in the second direction is included, and an active region of the device does not include the second regions.

A method of manufacturing a device by growing layers to form a device structure on a substrate in which a plurality of second regions having a second average dislocation density higher than a first average dislocation density and extending linearly align regularly in parallel to each other in a first region made of a crystal having the first average dislocation density, comprising:

• defining a device region not to include seven or more of the second regions and not to include the second regions in an active region of the device.

A device manufactured by growing layers forming a device structure on a substrate in which a plurality of second regions having a second average dislocation density higher than a first average dislocation density align regularly in a first region made of a crystal and having the first average dislocation density, in which the device region does not substantially include seven or more rows of the second regions in the second direction, and an active region of the device does not include the second regions.

A method of manufacturing a device by growing layers to form a device structure on a substrate in which a plurality of second regions having a second average dislocation density higher than a first average dislocation density and extending linearly align regularly in parallel to each other in a first region made of a crystal having the first average dislocation density, comprising:

• defining a device region such that the interval of the second regions is 50 μm or more, one or more of the second regions are included, and an active region of the device does not include the second regions.

A device manufactured by growing layers forming a device structure on a substrate in which a plurality of second regions having a second average dislocation density higher than a first average dislocation density align regularly in a first region made of a crystal and having the first average dislocation density, in which the interval of the second regions is 50 μm or more, one or more of the second regions are included, and an active region of the device does not include the second regions.