Thin film integrated circuit device IC label, container comprising the thin film integrated circuit, manufacturing method of the thin film integrated circuit device, manufacturing method of the container, and management method of product having the container

An IC label comprising:

• an insulating film;
• a plurality of semiconductor films isolated from one another which are provided over one surface of the insulating film;
• a thin film integrated circuit having the plurality of semiconductor films as an active region;
• and
• an affixing means for affixing a surface of the IC label to a container.

An IC label comprising a contactless thin film integrated circuit, said IC label being adhered to a container,

• wherein the thin film integrated circuit comprises:
• a plurality of semiconductor film isolated from one another which are provided over an insulating film as an active region;
• a gate electrode provided over the semiconductor film;
• and
• an antenna in a same layer as the gate electrode.

An IC label comprising a contactless thin film integrated circuit, said IC label being adhered to a container,

• wherein the thin film integrated circuit comprises:
• a plurality of semiconductor film isolated from one another which are provided over an insulating film as an active region;
• a wiring connected to an impurity region of the semiconductor film;
• and
• an antenna in a same layer as the wiring.

A container comprising:

• an insulating film;
• a plurality of semiconductor films isolated from one another, which are provided over one surface of the insulating film;
• and
• a thin film integrated circuit having the plurality of semiconductor films as an active region,
• wherein the thin film integrated circuit is adhered to the container.

A container comprising a contactless thin film integrated circuit that is adhered to the container,

• wherein the thin film integrated circuit comprises:
• a plurality of semiconductor films isolated from one another which are provided over one surface of an insulating film as an active region;
• a gate electrode that is provided over the plurality of semiconductor films;
• and
• an antenna that is provided in a same layer as the gate electrode,
• wherein the other surface of the insulating film comprises a metal oxide.

A container comprising a contactless thin film integrated circuit that is adhered to a container,

• wherein the thin film integrated circuit comprises:
• a plurality of semiconductor films isolated from one another which are provided over one surface of an insulating film as an active region;
• a wiring provided over the plurality of semiconductor films;
• and
• an antenna provided in a same layer as the wiring,
• wherein the other surface of the insulating film comprises a metal oxide.

A manufacturing method of a thin film integrated circuit device, comprising:

• forming a metal film over a first substrate;
• forming an insulating film in which an oxide film containing silicon and an insulating film containing nitrogen are laminated over the metal film;
• forming a semiconductor film over the insulating film;
• forming a thin film integrated circuit having the semiconductor film;
• adhering a second substrate to the semiconductor film with a first adhesive;
• separating the first substrate;
• adhering the metal film to a third substrate with a second adhesive;
• and
• removing the first adhesive and separating the second substrate,
• wherein a metal oxide is formed over the metal film;
• and
• wherein the separation occurs in a layer of the metal oxide or at a boundary between the metal film and the metal oxide.

A manufacturing method a thin film integrated circuit device, comprising:

• forming a metal film over a first substrate;
• forming an insulating film in which an oxide film containing silicon and an insulating film containing nitrogen are laminated over the metal film;
• forming a semiconductor film over the insulating film;
• forming a thin film integrated circuit by disposing a gate electrode and an antenna in a same layer over the semiconductor film;
• adhering a second substrate to the gate electrode and the antenna with a first adhesive;
• separating the first substrate;
• adhering a third substrate to the metal film with a second adhesive;
• and
• removing the first adhesive and separating the second substrate,
• wherein a metal oxide is formed over the metal film;
• and
• wherein the separation occurs in a layer of the metal oxide or at a boundary between the metal film and the metal oxide.

A manufacturing method of a thin film integrated circuit device, comprising:

• forming a metal film over a first substrate;
• forming an insulating film in which an oxide film containing silicon and an insulating film containing nitrogen are laminated over the metal film;
• forming a semiconductor film including an impurity region over the insulating film;
• forming a thin film integrated circuit by disposing a wiring that is connected to the impurity region and an antenna in a same layer over the semiconductor film;
• adhering a second substrate to the wiring and the antenna with the first adhesive;
• separating the first substrate;
• adhering a third substrate to the metal film with a second adhesive;
• and
• removing the first adhesive and separating the second substrate,
• wherein a metal oxide is formed over the metal film;
• and
• wherein the separation occurs in a layer of the metal oxide or at a boundary between the metal film and the metal oxide.

A manufacturing method of a container to which a thin film integrated circuit is adhered, comprising:

• forming a metal film over a first substrate;
• forming an insulating film in which an oxide film containing silicon and an insulating film containing nitrogen are laminated over the metal film;
• forming a semiconductor film over the insulating film;
• adhering a second substrate to the semiconductor film with a first adhesive;
• separating the first substrate;
• adhering a container to the metal film with a second adhesive;
• and
• removing the first adhesive and separating the second substrate;
• wherein a metal oxide is formed over the metal film;
• and
• wherein a separation occurs in a layer of the metal oxide or at a boundary between the metal film and the metal oxide.

A manufacturing method of a container to which a thin film integrated circuit is adhered, comprising:

• forming a metal film over a first substrate;
• forming an insulating film in which an oxide film containing silicon and an insulating film containing nitrogen are laminated over the metal film;
• forming a semiconductor film over the insulating film;
• adhering a second substrate to the semiconductor film with a first adhesive;
• separating the first substrate;
• adhering a container to the metal film with a second adhesive;
• removing the first adhesive and separating the second substrate;
• and
• forming a protective film so as to cover the container,
• wherein a metal oxide is formed over the metal film;
• and
• wherein a separation occurs in a layer of the metal oxide or at a boundary between the metal film and the metal oxide.

A management method of a product having a container, said container being adhered to a thin film integrated circuit having a semiconductor film provided over one surface of an insulating film and a metal oxide provided over the other surface of the insulating film;

• said management method comprising the steps of:
• holding the product to a reading means;
• and
• providing information obtained by the reading means to a consumer or a seller.

A management method of a product having a container, said container being adhered to a thin film integrated circuit having a semiconductor film provided over one surface of an insulating film and a metal oxide provided over the other surface of the insulating film;

• said management method comprising the steps of:
• holding the product to a reading means;
• and
• providing information obtained from the reading means to a manufacturer or a seller over a network.