Reflective type thin film transistor display device and methods for fabricating the same
AssigneeGem Line Technology Co., Ltd.
InventorsYuan-Tung Dai, Tsung-Neng Liao, Chun-Chi Lee
Life of this patent
Estimating the term…
Loading patent…
AssigneeGem Line Technology Co., Ltd.
InventorsYuan-Tung Dai, Tsung-Neng Liao, Chun-Chi Lee
Estimating the term…
A reflective type thin film transistor display device and methods for fabricating the same is disclosed. The fabrication process includes a first substrate, multiple layers of thin film transistor built on the top layer over the substrate, multiple layers of metal reflector on the periphery of the thin film transistor, and a second substrate, wherein the metal reflector and the thin film transistor are transferred onto the second substrate by a back-end fabrication process to cause the thin film transistor to be exposed on the back end. The metal reflector is formed in between oxide layers and coated with aluminum material on the back side. Since the back side of the reflective display device is not subjected to any etching process or oxidation at high temperature, it is fully flat for a reflective surface after turning over by the back-end fabrication process.
A reflective type thin film transistor display device comprising:
A reflective type thin film transistor display device comprising:
A method for fabricating a reflective type thin film transistor display device includes the formation of multiple transparent electrodes on periphery of the thin film transistor, and the formation of a metal reflector on top of lower oxide layer, wherein the surface of the metal reflector that corresponds to the transparent electrodes serves as a reflective surface.
A method for fabricating a reflective type thin film transistor display device includes the formation of a metal reflector on periphery of the thin film transistor, and the connection of the metal reflector to the thin film transistor.
Dependencies are inferred from the claim text.