Semiconductor structure, semiconductor device, and method and apparatus for manufacturing the same

A manufacturing method for a semiconductor structure having a non-single-crystal semiconductor film including a channel region for an active device, and a support substrate that supports the non-single-crystal semiconductor film, the method comprising subjecting an inner wall of a film-forming chamber to a surface etching process with a fluorine-based gas, coating the inner wall with an amorphous semiconductor film with a thickness of 50 to 1000 nm, placing the support substrate in the film-forming chamber and forming the non-single-crystal semiconductor film, and melting and recrystallizing the non-single-crystal semiconductor film by heating.

A manufacturing apparatus for a semiconductor structure having a non-single-crystal semiconductor film including a channel region for an active device, and a support substrate that supports the non-single-crystal semiconductor film, the apparatus comprising a film-forming unit that accommodates the support substrate in a film-forming chamber and forms the non-single-crystal semiconductor film, and a crystallizing unit that melts and recrystallizes the non-single-crystal semiconductor film, the film-forming chamber having an inner wall formed of a metal containing aluminum.

A semiconductor device comprising a non-single-crystal semiconductor film, a support substrate that supports the non-single-crystal semiconductor film, and an active device having a part of the non-single-crystal semiconductor film as a channel region, the channel region having an oxygen concentration not higher than 1×1018 atoms/cm3 and a carbon concentration not higher than 1×1018 atoms/cm3.

A semiconductor device comprising a non-single-crystal semiconductor film, a support substrate that supports the non-single-crystal semiconductor film, and an active device having a part of the non-single-crystal semiconductor film as a channel region, the channel region having an oxygen concentration not higher than 1×1018 atoms/cm3 and a stacking fault density not higher than 1×106 cm−3.

A manufacturing method for a semiconductor device having a non-single-crystal semiconductor film, a support substrate that supports the non-single-crystal semiconductor film, and an active device having a part of the non-single-crystal semiconductor film as a channel region, the method comprising subjecting an inner wall of a film-forming chamber to a surface etching process with a fluorine-based gas, coating the inner wall with an amorphous semiconductor film with a thickness of 50 to 1000 nm, placing the support substrate in the film-forming chamber and forming the non-single-crystal semiconductor film, and melting and recrystallizing the non-single-crystal semiconductor film, thus forming the active device having the part of the non-single-crystal semiconductor film as the channel region.