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US 2004/0164242 A1Published application
Sample preparation for transmission electron microscopy
AssigneeBal-Tec A.G.
InventorWolfgang Grunewald
Life of this patent
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Abstract
TEM FIB samples of a solid state material are subsequently thinned through a subsequent treatment step free of contamination and free of destruction to extremely thin thicknesses through the alternate-sided bombardment of the sample surfaces with an ion beam, with which high-resolution observation and analysis of the sample material with a TEM becomes possible.
Claims21
TEM FIB sample of a solid state material, which is adjusted with a subsequent treatment step on its surfaces (6a, b) to a desired thickness, wherein the thickness is <40 nm.
A method for production of a TEM FIB sample of a solid state material, comprising:
- subsequently etching the sample (5) through a subsequent working step on both sides to a desired thickness with an ion beam (8) being guided at a bombardment angle (α) relatively, alternatingly on the one side (6a) and on the other side (6b) of the sample (5).
Dependencies are inferred from the claim text.