Plasma treating device and substrate mounting table
AssigneeTokyo Electron Limited
InventorsHachishiro Iizuka, Taro Ikeda
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Abstract
A plasma treating device (15) comprising a treating container (20) that houses a wafer (W) for treating by treating gas plasma, and a susceptor (23) that is provided in the treating container (20) and has at least wafer (W)-mounted surface thereof consisting of an insulator (27). A treating gas is supplied from a gas supplying means (60) into the treating container (20), and a high-frequency power is applied to the susceptor (23) from a high-frequency power source (39). A lower electrode (25) connected to the power source (39) is provided on the susceptor (23), and an exposed electrode (29) connected to the lower electrode (25) is also provided exposed on the susceptor (23).
Claims21
A plasma processing apparatus comprising:
- a processing container for receiving a substrate to be processed and processing the substrate by a plasma of a processing gas;
- a substrate mounting table, installed in the processing container, for mounting the substrate thereon, the substrate mounting table including a mounting table main body formed of an insulator component;
- a gas supplying unit for supplying the processing gas into the processing container;
- a high frequency electrode installed at the substrate mounting table;
- a high frequency power supply, connected to the high frequency electrode of the substrate mounting table, for supplying a high frequency power;
- and
- one or more exposed electrodes installed in the substrate mounting table to be exposed therethrough and connected to the high frequency electrode.
A substrate mounting table for mounting a substrate to be processed while performing a plasma processing thereon, comprising:
- a mounting table main body made of an insulator component;
- a high frequency electrode, installed to the mounting table main body, to which high frequency power is applied;
- and
- one or more exposed electrodes installed in the mounting table main body to be exposed therethrough and connected to the high frequency electrode.
Dependencies are inferred from the claim text.