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US 2004/0163599 A1Published application
Film deposition system and method of fabricating semiconductor device employing the film deposition system
AssigneeRenesas Technology Corp.
InventorsYoshio Hayashide, Kazuo Kobayashi, Yasufumi Morimoto
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Abstract
A film deposition system comprises a chamber having an internal space, a support part provided in the internal space of the chamber for supporting a substrate, a gas supply part supplying gas to the internal space and a heating part heating the substrate. After an oxide film is formed on the substrate, the gas supply part supplies oxygen or a gas mixture of oxygen and ozone to the internal space while the heating part heats the substrate. Thus provided is a film deposition system capable of flattening an oxide film.
Claims9
A film deposition system comprising:
- a chamber having an internal space;
- a support part provided in said internal space of said chamber for supporting a substrate having a first main surface formed with a film and a second main surface opposite to said first main surface;
- a gas supply part supplying gas to said internal space;
- a heating part heating said second main surface of said substrate with a light source;
- and
- a pressure regulating part increasing the pressure of a part of said internal space closer to said first main surface beyond the pressure in another part closer to said second main surface for bringing said substrate into close contact with said support part,
- said support part supporting the outer peripheral portion or the outer peripheral portion and the central portion of said substrate to expose said first main surface and said second main surface in said internal space.
4 more elements
Dependencies are inferred from the claim text.