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AssigneeSilicon Light Machines Corporation
InventorsRonald O. Miles, Ludwig L. Galambos, Janos J. Lazar, Gabriel C. Risk, Alexei L. Alexandrovski, Gregory D. Miller, David Caudillo, Joseph M. McRae, Gisele L. Foulon
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In one embodiment, a ferroelectric material is processed by placing the material in an environment including metal vapor and heating the material to a temperature below the Curie temperature of the material. This allows the bulk conductivity of the ferroelectric material to be increased without substantially degrading its ferroelectric domain properties. In one embodiment, the ferroelectric material comprises lithium tantalate and the metal vapor comprises zinc.
A method of processing a ferroelectric material, the method comprising:
A system for processing a lithium tantalate material, the system comprising:
A method of processing a lithium tantalate material, the method comprising:
Dependencies are inferred from the claim text.