Method for manufacturing polycrystalline silicon thin film and thin film transistor fabricated using polycrystalline silicon thin film manufactured by the manufacturing
AssigneeSamsung SDI Co., Ltd.
InventorsJi Yong Park, Hye Hyang Park
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Abstract
A method of manufacturing polycrystalline silicon thin film using a laser beam to crystallize amorphous silicon thin film, the method including overlappingly irradiating the laser beam onto a region wider than 0.5 μm when crystallizing the amorphous silicon thin film.
Claims15
A method of manufacturing polycrystalline silicon thin film using a laser beam to crystallize amorphous silicon thin film, the method comprising overlappingly irradiating the laser beam onto a region wider than 0.5 μm when crystallizaing the amorphous silicon thin film.
A method of manufacturing polycrystalline silicon thin film by crystallizing amorphous silicon using a laser beam, the method comprising using a mask with a laser transmission region that is wider than a laser non-transmission region by more than 1 μm.
A method of manufacturing polycrystalline silicon thin film, the method comprising overlappingly irradiating already formed crystalline silcon in a region with a width larger than 0.5 μm.
A thin film transistor comprising a polycrystalline thin film having an average grain width of at least 0.2 μm, wherein the thin film was formed by overlappingly irradiating a region of the thin film, the region being more than 0.5 μm wide.
Dependencies are inferred from the claim text.