Semiconducting oxide nanostructures
AssigneeGeorgia Tech Research Corporation
InventorsZhong L. Wang, Zhengwei Pan, Zurong Dai
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Abstract
Nanostructures and methods of fabricating nanostructures are disclosed. A representative nanostructure includes a substrate having at least one semiconductor oxide. In addition, the nanostructure has a substantially rectangular cross-section. A method of preparing a plurality of semiconductor oxide nanostructures that have a substantially rectangular cross-section from an oxide powder is disclosed. A representative method includes: heating the oxide powder to an evaporation temperature of the oxide powder for about 1 hour to about 3 hours at about 200 torr to about 400 torr in an atmosphere comprising argon; evaporating the oxide powder; and forming the plurality of semiconductor oxide nanostructures.
Claims23
A nanostructure, comprising:
- a substrate comprising at least one semiconductor oxide;
- and
- a substantially rectangular cross-section.
A nanostructure comprising:
- a substrate comprising at least one semiconductor;
- and
- a top, a bottom, a right side, and a left side, wherein the top and the bottom have the same width and wherein the right side and the left side have the same height.
A method of preparing a plurality of semiconductor oxide nanostructures from an oxide powder, each of the plurality of semiconductor oxide nanostructures having a substantially rectangular cross-section, the method comprising:
- heating the oxide powder to an evaporation temperature of the oxide powder for about 1 hour to about 3 hours at about 200 torr to about 400 torr in an atmosphere comprising argon;
- evaporating the oxide powder;
- and
- forming the plurality of semiconductor oxide nanostructures.
Dependencies are inferred from the claim text.