US 2004/0163233 A1 · Methods of forming electrical connections within ferroelectric devices

Abstract

A fabrication process for ferroelectric capacitors includes forming openings 23, 30, in the device, into which electrically conductive material 28, 37 can be inserted to form electrical connections within the device. The surface of each opening is coated with a layer 24, 34 of getter material which absorbs contaminants 25, 31, 33 formed during the opening process. This means that in subsequent processing steps the contaminants do not vagabond towards the ferroelectric layers 7 of the device where they might otherwise cause damage, for example during a subsequent crystallisation stage.

Claims11

Dependent claims

A method of forming electrical connections during a fabrication process of a device including ferroelectric capacitors, the method including the steps of

forming an opening in the device for receiving electrically conductive material for forming an electrical connection;
depositing a layer of a getter material on the surface of the opening;
and
filling the opening with electrically conductive material.

1 more element

Dependencies are inferred from the claim text.

Facts

Application

10/377,156Filed 26 Feb 2003

Published

26 Aug 2004

Term ends

Not estimatedThe source records don’t support an estimate.

Classification11 codes

H10W 20/046
Of conductive barrier, adhesion or liner layers: the barrier, adhesion or liner layers being associated with interconnections of capacitors
H10D 1/682
Capacitors having no potential barriers: having dielectrics comprising perovskite structures
H10D 1/696
Electrodes: comprising multiple layers, e.g. comprising a barrier layer and a metal layer
H10W 20/081
Of dielectric parts thereof: by forming openings in the dielectric parts

Methods of forming electrical connections within ferroelectric devices

Life of this patent

Methods of forming electrical connections within ferroelectric devices

Life of this patent

Abstract

Claims11