Nondestructive characterization of thin films based on acquired spectrum
AssigneePhysical Electronics, Inc.
InventorsPaul E. Larson, David G. Watson
Life of this patent
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Abstract
The present invention provides for characterization of a film (e.g., thickness determination for a silicon oxynitride film) using collected spectral data. For example, an acquired spectrum may be cumulatively integrated and the geometric properties of the integrated spectrum may be used to determine component concentration information. Thickness measurements for the film may be provided based on the component concentration information.
Claims62
A method for use in characterizing a film, the method comprising:
- providing an acquired spectrum for a film to be characterized, wherein the film is formed on a substrate, and further wherein providing the acquired spectrum comprises providing a spectral peak shape representative of a concentration of at least one component in the film and at least an additional spectral peak shape representative of a concentration of the at least one component in at least a portion of the substrate upon which the film is formed;
- extracting component concentration information solely from the acquired spectrum, wherein the component concentration information comprises information representative of the concentration of the at least one component in the film and representative of a concentration of the at least one component in at least a portion of the substrate upon which the film is formed;
- and
- determining at least one thickness measurement for the film based on the component concentration information.
A method for use in characterizing a film, the method comprising:
- providing an acquired spectrum for a film to be characterized, wherein the film is formed on a substrate, and further wherein providing the acquired spectrum comprises providing overlapping peak areas representative of a concentration of silicon in the film and in at least a portion of the substrate;
- extracting component concentration information using solely the acquired spectrum, wherein the component concentration information comprises information representative of the concentration of silicon in the film and the concentration of silicon in at least a portion of the substrate upon which the film is formed;
- and
- determining at least a thickness measurement for the film based on the component concentration information.
A system for use in characterizing a film, wherein the system comprises:
- an x-ray source operable to irradiate one or more films with x-rays resulting in the escape of photoelectrons;
- an analyzer operable to detect escaping photoelectrons, wherein the analyzer is operable to generate a signal representative of the detected photoelectrons for use in providing an acquired spectrum for the film;
- and
- a computing apparatus operable to:
- recognize a spectral peak shape of the acquired spectrum representative of a concentration of at least one component of the film, wherein the film is formed on a substrate;
- recognize at least one additional spectral peak shape of the acquired spectrum representative of a concentration of the at least one component in at least a portion of the substrate upon which the film is formed;
- extract component concentration information solely from the acquired spectrum, wherein the component concentration information comprises information representative of a concentration of the at least one component in the film and a concentration of the at least one component in at least a portion of the substrate upon which the film is formed;
- and
- determine at least one thickness measurement for the film based on the component concentration information.
A program storage media, readable by a media read apparatus under control of a computer, tangibly embodying a program executable to perform a process for characterization of thin films, wherein the program is operable to:
- recognize a spectral peak shape representative of a concentration of at least one component of the film, wherein the film is formed on a substrate;
- recognize at least one additional spectral peak shape representative of a concentration of the at least one component in at least a portion of the substrate upon which the film is formed;
- extract component concentration information solely from the acquired spectrum, wherein the component concentration information is representative of a concentration of the at least one component in the film and a concentration of the at least one component in at least a portion of the substrate upon which the film is formed;
- and
- determine at least one thickness measurement for the film based on the component concentration information.
Dependencies are inferred from the claim text.