Method for manufacturing endo-osseous implants or medical prosthesis by ionic implantation technique
AssigneesFundaction Inasmet, Miguel Angel De Maeztu Martinez
InventorsMiguel Angel De Maeztus Martinez, Jose Inaki Alava Marquinez, Alberto Luis Garcia, Inigo Braceras Izaguirre, Jose Ignacio Onate De La Presa
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Abstract
The method comprises the ion implantation of controlled quantities of elements such as CO, C or O in endo-osseous implants or prostheses manufactured in metals, metallic alloys or biocompatible compound materials. This surface treatment originates some modifications in the characteristics of the surface of the endo-osseous implants or prostheses which increases significantly their degree of osseointegration.
Claims9
A method for the production of endo-osseous implants or medical prostheses, said endo-osseous implants or medical prostheses being manufactured from a base material, by means of a surface ion implantation treatment of, at least, an element selected among the elements C, O, H, Xe, Ar, He, Kr, Ne and/or a compound which comprises one or more of said elements, in which an ion beam energy is employed of between 1 keV and 1 MeV, in which the process of ion implantation is carried out in a treatment chamber with a vacuum better than 10−3 millibars and a dose is applied of, at least, 1015 ions/cm2.
Method according to any one of the previous claims, in which the process of ion implantation takes place in presence of a residual atmosphere of oxygen or of organic compounds in the treatment chamber.
Method according to any one of the previous claims, in which an organic compound is evaporated during the process of ion implantation in the treatment chamber.
Method according to any one of the previous claims, in which the process of ion implantation is applied on said endo-osseous implants or medical prostheses by means of techniques of line of sight ion implantation or beam ion implantation, plasma immersion ion implantation or plasma source ion implantation, or equivalent techniques.
Method according to any one of the previous claims, in which the process of ion implantation is carried out at a temperature between −120° C. and 800° C.
Method according to any one of the previous claims, in which the endo-osseous implants or the prostheses undergo a thermal treatment at a temperature of between approximately 250° C. and 800° C. after the process of ion implantation.
An endo-osseous implant or medical prostheses obtainable by means of the method of whatever of the previous claims.
Dependencies are inferred from the claim text.