Cleaning liquid used in photolithography and a method for treating substrate therewith
OwnerShigeru Yokoi, Kazumasa Wakiya +1inventors
InventorsShigeru Yokoi, Kazumasa Wakiya, Koji Saito
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Abstract
It is disclosed a cleaning liquid for stripping and dissolving a photoresist pattern having a film thickness of 10-150 μm, which contains (a) 0.5-15 mass % of a quaternary ammonium hydroxide, such as tetrapropylammonium hydroxide and tetrabutylammonium hydroxide, (b) 65-97 mass % of a water-soluble organic solvent, such as dimethylsulfoxide or a mixed solvent thereof with N-methyl-2-pyrrolidone, sulforane, etc. and (c) 0.5-30 mass % of water, and a method for treating a substrate therewith.
Claims11
A cleaning liquid for stripping and dissolving a photoresist pattern having a film thickness of 10-150 μm, which contains (a) 0.5-15 mass % of a quaternary ammonium hydroxide represented by the following general formula (I):
- 3
- wherein all groups or at least three groups of R1, R2, R3, and R4 each independently represents an alkyl group or a hydroxyalkyl group each having 3-6 carbon atoms, and one group of R1, R2. R3, and R4 may represent an alkyl group or a hydroxyalkyl group each having 1-6 carbon atoms, (b) 65-97 mass % of a water-soluble organic solvent, and, (c) 0.5-30 mass % of water.
Dependencies are inferred from the claim text.