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AssigneesRenesas Technology Corp., Matsushita Electric Industrial Co., Ltd., EKC Technology, Inc.
InventorsItaru Kanno, Yasuhiro Asaoka, Masahiko Higashi, Yoshiharu Hidaka, Etsuro Kishio, Tetsuo Aoyama, Tomoko Suzuki, Toshitaka Hiraga, Toshihiko Nagai
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The cleaning composition for removing resists includes a salt of hydrofluoric acid and a base not containing a metal (A component), a water-soluble organic solvent (B1 component), at least one acid selected from a group consisting of organic acid and inorganic acid (C component), water (D component), and optionally an ammonium salt (E1 component), and its hydrogen ion concentration (pH) is 4-8. Thus, in the manufacturing process of a semiconductor device such as a copper interconnecting process, removing efficiency of resist residue and other etching residue after etching or ashing improves, and corrosion resistance of copper and insulating film also improves.
A cleaning composition for removing resists, comprising a salt of hydrofluoric acid and a base not containing a metal (A component), a water-soluble organic solvent (B1 component), at least one acid selected from a group consisting of organic acid and inorganic acid (C component) and water (D component), and having hydrogen ion concentration (pH) of 4-8.
A cleaning composition for removing resists, comprising a salt of hydrofluoric acid and a base not containing a metal (A component), a water-soluble organic solvent (B1 component), at least one acid selected from a group consisting of organic acid and inorganic acid (C component), water (D component) and an ammonium salt (E1 component), and having hydrogen ion concentration (pH) of 4-8.
A cleaning composition for removing resists, comprising a salt of hydrofluoric acid and a base not containing a metal (A component), a water-soluble organic solvent (B2 component), phosphonic acid (C1 component), water (D component), and a base not containing a metal (E component), and having hydrogen ion concentration (pH) of 2-8.
A cleaning composition for removing resists, comprising a salt of hydrofluoric acid and a base not containing a metal (A component), a water-soluble organic solvent (B2 component), phosphonic acid (C1 component), water (D component), a base not containing a metal (E component) and a Cu corrosion inhibitor (F component), and having hydrogen ion concentration (pH) of 2-8.
Dependencies are inferred from the claim text.