Polishing pad for in-situ endpoint detection
AssigneeApplied Materials, Inc., a Delaware corporation
InventorsManoocher Birang, Allan Glenson
Life of this patent
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Abstract
An apparatus and method of chemical mechanical polishing (CMP) of a wafer employing a device for determining, in-situ, during the CMP process, an endpoint where the process is to be terminated. This device includes a laser interferometer capable of generating a laser beam directed towards the wafer and detecting light reflected from the wafer, and a window disposed adjacent to a hole formed through a platen. The window provides a pathway for the laser beam during at least part of the time the wafer overlies the window.
Claims26
A polishing article for use in a chemical mechanical polishing system, said polishing article comprising:
- a polishing pad having a polishing surface and a bottom surface;
- and
- a window from said polishing surface to said bottom surface, said window including a solid light transmissive element abutting and secured to the polishing pad, the solid light transmissive element being more transmissive to light than the polishing surface.
A polishing article for use in a chemical mechanical polishing system, said polishing article comprising:
- a polishing pad having a polishing surface and a bottom surface;
- and
- a window from said polishing surface to said bottom surface, the window including a solid light transmissive element integrally molded to the polishing pad, the light transmissive element being more transmissive to light than the polishing surface.
A polishing article for use in a chemical mechanical polishing system, said polishing article comprising:
- a light transmissive first layer spanning the polishing article;
- and
- a second layer that is less transmissive to light than the first layer, the second layer having an aperture threrethrough.
Dependencies are inferred from the claim text.