US 2004/0106335 A1Published application

Semiconductor device and method of manufacturing the same

AssigneeMitsubishi Denki Kabushiki Kaisha Kabushiki Kaisha Toshiba Rohm Co., Ltd.

InventorsYoshihiko Nemoto, Kazumasa Tanida, Kenji Takahashi

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Abstract

Semiconductor device includes a pair of substrates (1, 2) disposed oppositely, semiconductor elements (5, 6) formed in the substrates (1, 2), respectively, and having semiconductor circuits (3, 4) and electrodes (7, 8), respectively, a wiring conductor (9) interposed between the electrodes (7, 8), and a through electrode (12) extending through one substrate (1) and connected to the electrode (7) via the wiring conductor (9). The other substrate (2) is disposed laterally of the through electrode (12). Surface of the through electrode (12) projecting from the one substrate (1) and lateral surface of the element (6) are coated with an insulation material (13). The through electrode (12) has one end exposed in a back surface of the one substrate (1), while other end is positioned flush with a back surface of the other substrate (2), being exposed.

Claims20

Dependent claims

A semiconductor device, comprising:

first and second semiconductor substrates having respective opposite surfaces disposed in opposition to each other;
a first semiconductor element formed in said opposite surface of said first semiconductor substrate and comprised of a first semiconductor circuit and a first electrode;
a second semiconductor element formed in said opposite surface of said second semiconductor substrate and comprised of a second semiconductor circuit and a second electrode;
a first wiring conductor layer formed of an electrically conductive material and interposed between said first and second electrodes;
and
a through electrode extending through said first semiconductor substrate and connected to said first and second electrodes through the medium of said first wiring conductor layer,
wherein said second semiconductor substrate is disposed above said first semiconductor substrate and disposed on a lateral side of said through electrode, being distanced therefrom;
wherein lateral surface of said through electrode projecting from said first semiconductor substrate and lateral surface of said second semiconductor element are coated with an insulation material layer;
wherein said through electrode has one end portion exposed from a back surface of said first semiconductor substrate to serve as a first external terminal;
and
wherein said through electrode has the other end portion positioned at a same height as a back surface of said second semiconductor substrate and exposed from said insulation material layer to serve as a second external terminal.

8 more elements

A method of manufacturing a semiconductor device, comprising:

a circuit forming step of forming a first semiconductor circuit including a connecting terminal portion on a first semiconductor substrate;
a hole forming step of forming a first hole of a predetermined depth reaching a semiconductor substrate matrix of said first semiconductor substrate at a position located outside of a region in which a second semiconductor element including a second semiconductor circuit and a second electrode formed previously in a second semiconductor substrate is to be disposed;
an insulation film deposition step of depositing a insulation film on a lateral wall and a bottom of said first hole and a surface of said first semiconductor substrate in which said first semiconductor circuit is formed;
an insulation film eliminating step of eliminating said insulation film formed on the bottom of said hole and said connecting terminal portion;
a wiring conductor connecting step of forming a wiring conductor layer of an electrically conductive material such that one end portion of said wiring conductor layer is connected to the semiconductor substrate matrix forming the bottom of said hole with other end portion thereof serving as a first electrode;
a resist pattern forming step of applying a resist on the side of said semiconductor substrate in which said first semiconductor circuit is formed to thereby form a resist pattern of a predetermined thickness, said resist pattern having an opening for forming said first hole;
an electrode forming step of forming a through electrode on said electrically conductive material through said opening formed in said resist pattern by electroplating with said first semiconductor substrate matrix being used as a cathode;
a resist removing step of removing said resist;
an element interconnecting step of connecting a first semiconductor element including said first semiconductor circuit and said first electrode formed in said first semiconductor substrate with said second semiconductor element through the medium of said first electrode and said second electrode;
a through electrode insulation coating step of coating said second semiconductor substrate and said through electrode with an insulation material on the surface of said first semiconductor substrate in which said first semiconductor circuit is formed;
a surface grinding step of grinding the insulation material coated in said through electrode insulation coating step from a side of said first semiconductor substrate on which said second semiconductor substrate is mounted until said through electrode is exposed;
and
a back surface grinding step of grinding a back surface of said first semiconductor substrate by a predetermined thickness.

10 more elements

Dependencies are inferred from the claim text.