Method for minimizing slip line faults on a semiconductor wafer surface

A method for minimizing slip line faults on a surface of a semiconductor wafer that has been obtained using a transfer technique, which comprises:

• heating such semiconductor wafer from an ambient temperature to a first higher temperature of about 700 to 800° C.;
• halting the heating at the first higher temperature for a time sufficient to stabilize the wafer;
• and
• further heating the wafer from the first higher temperature to a target higher temperature of about 1100 to 1300° C. during a predetermined time interval, with the further heating during an initial portion of the time interval being conducted continuously at a relatively low heating rate from the first higher temperature to an intermediate temperature of about 800 to 1100° C. and at a relatively higher heating rate during a final portion of the time interval to the target temperature to thus minimize slip line faults in the surface of the wafer.