US 2004/0106302 A1 · Method for forming PE-TEOS layer of semiconductor integrated circuit device

Abstract

A method of forming a PE-TEOS layer of a semiconductor IC device provides uniformly thick PE-TEOS layers on a batch of wafers. First, a loading wafer cassette is prepared to provide the wafers to be processed. Next, a process atmosphere is pre-created in a processing chamber. Then the wafers are supplied in sequence into the chamber from the loading wafer cassette and the wafers are mounted on a heater table in the chamber. Next, the PE-TEOS layer is deposited on the wafers by spraying a process gas into the chamber through showerheads. Next, the wafers are discharged from the chamber. Once the chamber is cleared of wafers, the inside of the chamber is cleaned by supplying a cleaning gas into the chamber, and exciting the cleaning gas with RF power. Subsequently, more TEOS gas is supplied into the chamber through the showerheads without being excited by RF power to especially reduce the temperature of the showerheads and that prevailing inside the chamber. In particular, the temperature within the chamber is brought back down to the process temperature.

Claims14

Dependent claims

A method of forming a PE-TEOS layer of a semiconductor integrated circuit device, said method comprising:

providing a plurality of wafers to be batch-processed using a loading wafer cassette containing the wafers;
pre-creating a process atmosphere in a chamber, the atmosphere being the same as one in which PE-TEOS will be formed on the wafers;
subsequently supplying the plurality of wafers in sequence from the loading wafer cassette and onto a table comprising a heater in the chamber;
forming a PE-TEOS layer on the plurality of wafers, said forming comprising spraying a process gas, including TEOS, into the chamber through showerheads and onto the wafers disposed on the heating table, and exciting the process gas using RF power;
discharging the plurality of wafers from the chamber;
cleaning the inside of the chamber once all of the wafers in the chamber have been discharged from the chamber;
and
after the chamber has been cleaned, and before any more wafers are loaded into the chamber, supplying TEOS gas into the chamber through the showerheads without exciting the TEOS gas with RF power so as to reduce the temperature of the showerheads and that prevailing inside the chamber.

5 more elements

Dependencies are inferred from the claim text.

Method for forming PE-TEOS layer of semiconductor integrated circuit device

Life of this patent

Method for forming PE-TEOS layer of semiconductor integrated circuit device

Life of this patent

Abstract

Claims14