Side-bonding method of flip-chip semiconductor device, MEMS device package and package method using the same

A MEMS device package comprising:

• a lower substrate having a MEMS device formed thereon;
• and
• an upper substrate bonded to the lower substrate to cover the MEMS device, wherein the upper substrate includes:
• a trench formed in a contact surface thereof along a bonding line with the lower substrate, the trench having a first UBM formed therein;
• and
• a cavity formed in the contact surface so that the MEMS device on the lower substrate is located therein;
• and wherein the lower substrate includes:
• a second UBM formed on a contact surface thereof along the bonding line in a location corresponding to the trench of the upper substrate;
• and
• solder formed on the second UBM and melted in the trench by heating to be bonded.

A method of forming a MEMS device package including a lower substrate having a MEMS device formed thereon, and an upper substrate being coupled with the lower substrate to cover the MEMS device, the method comprising:

• a) forming a via hole through the upper substrate, and a trench in a contact surface of the upper substrate along a bonding line with the lower substrate;
• b) forming a first UBM on the via hole and the trench, respectively;
• c) forming a second UBM on portions of the lower substrate corresponding to respective locations of the via hole and the trench;
• d) plating solder on the second UBM to have a predetermined thickness;
• e) inserting the solder into the via hole and the trench, respectively, so as to couple the upper substrate and the lower substrate;
• and
• f) heating the coupled upper substrate and lower substrate so that the solder is melted and bonded.