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US 2004/0106293 A1Published application
Method for etching organic insulating film and dual damasene process
OwnerYoshiki Igarashiinventor
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Abstract
The flow ratio of Ar is set to 80% or higher when an SiOC-based low dielectric constant film is etched using a C4F8/Ar/N2-based mixed gas. This can increase the selection ratio of the SiOC-based low dielectric constant film to a silicon nitride film and can make a micro-trench produced during etching smaller.
Claims14
A method for etching an organic insulating film, wherein an etching gas is a mixed gas containing a fluorocarbon-based gas, an N2 gas, and an inert gas whose flow ratio to a total flow rate of the etching gas is 80% or higher.
A method for etching an organic insulating film, comprising:
- etching an organic insulating film with a resist film serving as a mask layer, by using an etching gas containing a hydrofluorocarbon-based gas, an N2 gas, and an inert gas whose flow ratio to a total flow rate of the etching gas is 80% or higher.
A dual damascene process comprising:
- forming a via hole in an organic insulating film with a nitride film serving as an etch stop layer, by using an etching gas containing a fluorocarbon-based gas, an N2 gas, and an inert gas whose flow ratio to a total flow rate of the etching gas is 80% or higher;
- etching the organic insulating film halfway to a bottom by using the etching gas, to thereby form a trench in the organic insulating film;
- and
- burying a conductive material in the via hole and the trench.
1 more element
Dependencies are inferred from the claim text.