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AssigneeMax-Planck-Gesellschaft zur Forderung der Wissenschaften e.V.
InventorMargit Zacharias
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A method for manufacturing a semiconductor structure comprising clusters and/or nanocrystals of silicon described which are present in distributed form in a matrix of silicon compound. The method comprises the steps of depositing a layer of thermally nonstable silicon compound having a layer thickness in the range between 0.5 nm and 20 nm especially between 1 nm and 10 nm and in particular between 1 nm and 7 nm on a support and thermal treatment at a temperature sufficient to carry out a phase separation to obtain clusters or nanocrystals of silicon in a matrix of thermally stable silicon compound. The claims also cover semiconductor structures having such distributed clusters or nanocrystals of silicon The method described enables the economic production of high density arrays of silicon clusters or nano-crystals with a narrow size distribution.
A method of manufacturing a semiconductor structure comprising clusters and/or nanocrystals of silicon which are present in distributed form in a matrix of a silicon compound, comprising the steps of:
A semiconductor structure comprising clusters and/or nano-crystals of silicon which are present in distributed form in a matrix of a silicon compound, said clusters and/or nanocrystals of silicon having a height in the range between 0.5 nm and 20 nm and lateral dimensions in the range between 0.5 nm and 20 nm, the clusters and/or nanocrystals being separated from one another by a thermally stable silicon compound matrix material, with the mean spacing (surface to surface) between adjacent clusters and/or nanocrystals lying in the range between 0.5 nm and 100 nm, and said matrix of thermally stable silicon compound containing the clusters and/or nanocrystals of silicon being provided on a support and having a thickness in the range between 0.5 nm to 20 nm, with the clusters or nanocrystals being substantially coplanar.
A semiconductor structure comprising at least one layer of a thermally non-stable silicon compound having a layer thickness in the range between 0.5 nm and 20 nm on a support capable of withstanding temperatures of at least 700° C., wherein at least an interface between a support and said thermally non-stable silicon compound layer comprises material selected from a group consisting of a thermally stable silicon compound and at least one rare earth compound.
Dependencies are inferred from the claim text.