Method for forming silicide at source and drain
AssigneeNanya Technology Corporation
InventorsKuo-Chien Wu, Jeng-Ping Lin
Life of this patent
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Abstract
A method for forming silicide at source and drain. The method includes providing a semiconductor substrate having an active region and peripheral region, wherein gates with source and drain on two sides are formed in the peripheral region, conformally forming a barrier layer to cover the active region and the peripheral region, forming a mask layer to cover the barrier layer at the active region, removing the barrier layer from the peripheral region; removing the mask layer, forming a metal layer to cover the peripheral region, and subjecting the metal layer to thermal process such that silicon reacts with the metal to form silicide at the source and the drain.
Claims19
A method for forming silicide at source and drain, comprising:
- providing a semiconductor substrate having an active region and a peripheral region, wherein gates with source and drain on the sides are formed in the peripheral region;
- forming a barrier layer conformally to cover the active region and the peripheral region;
- forming a mask layer to cover the barrier layer at the active region;
- removing the barrier layer covering the peripheral region;
- removing the mask layer;
- forming a metal layer to cover the peripheral region;
- and
- subjecting the metal layer to thermal process so that silicon reacts with the metal to form silicide at the source and the drain.
A method for forming silicide at source and drain, comprising:
- providing a semiconductor substrate having an active region and a peripheral region, wherein gates with spacers on the sides are formed in the peripheral region, and source and drain are formed in the semiconductor substrate on both sides of the gates;
- conformally forming a barrier layer to cover the active region and the peripheral region;
- forming a mask layer to cover the barrier layer at the active region;
- removing the barrier layer from the peripheral region;
- removing the mask layer;
- forming a metal layer to cover the peripheral region;
- and
- subjecting the metal layer to thermal process so that silicon reacts with the metal to form silicide at the source and the drain.
Dependencies are inferred from the claim text.