Method of manufacturing a semiconductor device
AssigneeHynix Semiconductor Inc.
InventorNoh Yeal Kwak
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Abstract
Disclosed is a method of manufacturing a semiconductor device. In ion implantation process for controlling the threshold voltage of the transistor or the semiconductor device such as a flash memory cell, the dose of the impurity capable of securing the uniformity is implanted by minimum. The retained dose of the impurity is controlled by out gassing the implanted impurity by means of a cleaning process. Therefore, a uniform distribution characteristic of the implanted impurity could be obtained. A transistor or a flash memory cell of a low operating voltage could be manufactured.
Claims10
A method of manufacturing a semiconductor device, comprising the steps of:
- providing a semiconductor substrate on which a given process is implemented in order to form a semiconductor device;
- forming an ion implantation layer by means of an ion implantation process;
- and
- controlling the impurity concentration of the ion implantation layer by means of a cleaning process.
Dependencies are inferred from the claim text.