Processing method of forming MRAM circuitry
AssigneeMicron Technology, Inc.
InventorsLi Li, Max F. Hineman, Mark E. Tuttle
Life of this patent
Estimating the term…
Abstract
A method of forming integrated circuitry includes chemical vapor depositing a silicon carbide comprising layer over a substrate at a temperature of no greater than 500° C. Plasma etching is conducted through at least a portion of the silicon carbide comprising layer using a gas chemistry comprising oxygen and hydrogen. Semiconductor processing methods include the above in fabrication of contact openings and in fabrication of MRAM circuitry. Semiconductor processing methods also include fabrication of contact openings using resist and removing silicon carbide comprising material and resist in a common plasma etching step.
Claims47
A method of forming integrated circuitry, comprising:
- chemical vapor depositing a silicon carbide comprising layer over a substrate at a temperature of no greater than 500° C.;
- and
- plasma etching through at least a portion of the silicon carbide comprising layer using a gas chemistry comprising oxygen and hydrogen.
A semiconductor processing method, comprising:
- chemical vapor depositing a silicon carbide comprising layer over a semiconductor substrate at a temperature of no greater than 500° C.;
- forming an insulative material over the silicon carbide comprising layer;
- etching a contact opening into the insulative material to proximate the silicon carbide comprising layer;
- and
- plasma etching within the contact opening through the silicon carbide comprising layer using a gas chemistry comprising oxygen and hydrogen to extend the contact opening through the silicon carbide comprising layer and under conditions which etches the silicon carbide comprising layer at a rate at least twice that of any etching of the insulative material.
A process of forming MRAM circuitry, comprising:
- forming an MRAM cell comprising magnetic material over a substrate;
- chemical vapor depositing a silicon carbide comprising layer over the MRAM cell at a temperature of no greater than 500° C.;
- forming an insulative material over the silicon carbide comprising layer;
- etching a contact opening through the insulative material using the silicon carbide comprising layer as an etch stop;
- and
- plasma etching within the contact opening through the silicon carbide comprising layer using a gas chemistry comprising oxygen and hydrogen to extend the contact opening through the silicon carbide comprising layer to the magnetic material of the MRAM cell, and under conditions which etches the silicon carbide comprising layer at a rate at least twice that of any etching of the insulative material.
A semiconductor processing method, comprising:
- chemical vapor depositing a silicon carbide comprising layer over a semiconductor substrate at a temperature of no greater than 500° C.;
- forming an insulative material over the silicon carbide comprising layer;
- forming resist over the insulative material;
- forming a mask opening within the resist to proximate the insulative layer;
- etching a contact opening into the insulative material through the mask opening to proximate the silicon carbide comprising layer;
- and
- in a common etching step and with the resist on the substrate, a) plasma etching within the contact opening through the silicon carbide comprising layer using a gas chemistry comprising oxygen and hydrogen to extend the contact opening through the silicon carbide comprising layer and under conditions which etch the silicon carbide comprising layer at a rate at least twice that of any etching of the insulative material, and b) plasma etching all resist from the substrate.
Dependencies are inferred from the claim text.