US 2004/0106265 A1 · Avalanche photodiode for photon counting applications and method thereof

Abstract

A method for manufacturing an improved APD structure and an improved manner of operating APD's particularly beneficial for a single photon detection applications are provided. An APD is provided having an absorption region, a control region, and a multiplication region, wherein the multiplication region has a k value of approximately 1. In one example the multiplication region comprises a doped InP layer. The field control layer is designed so as to produce a reduction of electric field that is equal to the multiplication region's breakdown electric field, plus or minus 5 V/μm. The method comprises applying a potential across the APD so as to induce an electric field across the multiplication region that exceeds the breakdown field; while having the control region shield the absorption region to prevent excessive noise.

Claims30

Dependent claims

A method for manufacturing an avalanche photodiode suitable for single photon detection applications, comprising forming upon a substrate the layers comprising at least:

an absorption layer defining a tunneling onset field;
at least one intermediate-bandgap transition layer;
a field control layer;
a multiplication layer defining a breakdown electric field;
wherein said field control layer is configured so as to generate one of:
i. an electric field reduction therein comparable to said breakdown electric field;
and,
ii. an electric field reduction therein that, together with an electric field reduction in said multiplication layer, provides a total field reduction comparable to said breakdown electric field.

5 more elements

Dependencies are inferred from the claim text.

Avalanche photodiode for photon counting applications and method thereof

Life of this patent

Avalanche photodiode for photon counting applications and method thereof

Life of this patent

Abstract

Claims30