Structure and method of making a high performance semiconductor device having a narrow doping profile
AssigneeSemiconductor Components Industries, LLC
InventorGary H. Loechelt
Life of this patent
Estimating the term…
Abstract
A structure and method of making an NPN heterojunction bipolar transistor (100) includes a semiconductor substrate (11) with a first region (82) containing a dopant (86) for forming a base region of the transistor. A second region (84) adjacent to the first region is used to form an emitter region of the transistor. An interstitial trapping material (81) reduces diffusion of dopants in the base region during subsequent thermal processing.
Claims23
An NPN heterojunction bipolar transistor, comprising a semiconductor substrate having a first region containing a first dopant for forming a base region of the transistor and a second region adjacent to the first region that includes an interstitial trapping material.
A semiconductor device, comprising:
- a semiconductor substrate having a surface formed with a dielectric material;
- a first semiconductor layer formed adjacent to the dielectric material and including an interstitial trapping material;
- and
- a second semiconductor layer doped to form a base region of the semiconductor device.
A method of forming an NPN heterojunction bipolar transistor, comprising:
- providing a semiconductor substrate having a first region formed containing a first dopant for forming a base region of the transistor and a second region formed adjacent to the first region and comprising an interstitial trapping material.
Dependencies are inferred from the claim text.