Method of manufacturing capacitor of semiconductor device by simplifying process of forming dielectric layer and apparatus therefor

A method of manufacturing a capacitor of a semiconductor device, the method comprising:

• forming a first electrode on a semiconductor substrate;
• depositing a first Ta2O5 layer on the first electrode;
• curing the first Ta2O5 layer in an O3 atmosphere;
• depositing a second Ta2O5 layer on the cured first Ta2O5 layer using only Ta(OC2H5)5 without a reactant gas;
• and
• forming a second electrode on the second Ta2O5 layer without curing the second Ta2O5 layer.

An apparatus for forming a dielectric layer comprising:

• a loadlock chamber including a cassette for receiving a plurality of semiconductor substrates;
• a transfer chamber including a robot arm connected to the loadlock chamber for loading and unloading a semiconductor substrate to and from the loadlock chamber;
• a first deposition chamber connected to the transfer chamber for depositing a first dielectric layer on the substrate;
• a curing chamber connected to the first deposition chamber;
• and
• a second deposition chamber connected to the transfer chamber for depositing a second dielectric layer on the substrate,
• wherein a first dielectric layer deposited in the first deposition chamber is cured in the curing chamber and then a second dielectric layer is deposited in the second deposition chamber.