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US 2004/0106248 A1Published application
Method of fabricating a semiconductor device
AssigneeMicron Technology, Inc.
InventorsDon Carl Powell, Garry Anthony Mercaldi
Life of this patent
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Abstract
Semiconductor devices that utilize a silicon-containing dielectric layer are disclosed. In one embodiment, a silicon-containing material is deposited on a substrate. The deposited material is processed with a reactive agent to react with silicon atoms of the deposited material to form the dielectric layer. The silicon-containing dielectric layer provides for improved or smaller semiconductor devices by reducing leakage and increasing the dielectric constant.
Claims4
A method of fabricating a semiconductor device comprising:
- providing a substrate having at least one semiconductor layer;
- forming a conductive layer over the substrate;
- vapor priming a first silicon-containing material over the gate oxide;
- vapor priming a second silicon-containing material over the first silicon-containing material;
- forming a silicon-containing dielectric layer having a thickness of about 35 Å by processing the first silicon-containing material and the second silicon-containing material with a reactive agent selected to react with silicon atoms of the first silicon-containing material and the second silicon-containing material;
- and
- forming a gate electrode over the silicon-containing dielectric layer.
4 more elements
Dependencies are inferred from the claim text.