Method for forming semiconductor device
AssigneeOki Electric Industry Co., Ltd.
InventorAkira Takahashi
Life of this patent
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Abstract
In a method for forming a silicon-on-insulator FET providing a contact to be given a fixed potential to a substrate, the substrate-biasing between the SOI transistor and the silicon substrate is performed via the plug. As a result, the contact hole for the substrate-biasing does not need to pass through the insulating layer, the silicon layer, and the interlayer insulating layer. Therefore, the interlayer insulating layer can be make shallow the depth. The invention can be enough to be implanted ions to the surface of the substrate via the contact hole for substrate-biasing. It can form the contact hole for substrate-biasing without the contact hole for substrate-biasing causes an opening fault.
Claims20
A method for forming a silicon-on-insulator FET providing a contact to be given a fixed potential to a substrate, the method comprising:
- providing a semiconductor substrate having an insulating layer;
- forming a silicon layer on the insulating layer;
- forming a first conductive contact layer extending through the silicon layer and the insulating layer, the first conductive contact layer electrically connected to the substrate;
- forming an interlayer-insulating layer overlying the silicon layer;
- forming a through-hole in the interlayer-insulating layer, the through-hole forming so as to correspond to the first conductive contact layer;
- and
- filling with a second conductive contact layer in the through-hole.
A method for forming a silicon-on-insulator FET providing a contact to be given a fixed potential to a substrate, the method comprising:
- providing a semiconductor substrate having an insulating layer;
- forming a silicon layer on the insulating layer;
- forming a first through-hole passing through the silicon layer and the insulating layer;
- filling with a first conductive contact layer in the first through-hole, the first conductive contact layer electrically connected to the substrate;
- forming an interlayer-insulating layer overlying the silicon layer;
- forming a second through-hole in the interlayer-insulating layer;
- the second through-hole forming so as to correspond to the first conductive contact layer;
- and
- filling with a second conductive contact layer in the second through-hole.
A method for forming a silicon-on-insulator FET providing a contact to be given a fixed potential to a substrate, the method comprising:
- providing a semiconductor substrate having an insulating layer;
- forming a silicon layer on the insulating layer;
- forming an isolating layer in a part of the silicon layer;
- forming a first conductive contact layer extending through the isolating layer and the insulating layer, the first conductive contact layer electrically connected to the substrate;
- forming an interlayer-insulating layer overlying the silicon layer and the first conductive contact layer;
- forming a through-hole in the interlayer-insulating layer, the through-hole forming so as to correspond to the first conductive contact layer;
- and
- filling with a second conductive contact layer in the through-hole.
A method for forming a silicon-on-insulator FET providing a contact to be given a fixed potential to a substrate, the method comprising:
- providing a semiconductor substrate having an insulating layer;
- forming a silicon layer on the insulating layer;
- forming an isolating layer in a part of the silicon layer;
- forming a first through-hole passing through the isolating layer and the insulating layer;
- filling with a first conductive contact layer in the first through-hole, the first conductive contact layer electrically connected to the substrate;
- forming an interlayer-insulating layer overlying the silicon layer;
- forming a second through-hole in the interlayer-insulating layer;
- the second through-hole forming so as to correspond to the first conductive contact layer;
- and
- filling with a second conductive contact layer in the second through-hole.
Dependencies are inferred from the claim text.