Method for fabricating semiconductor film and semiconductor device and laser processing apparatus
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsTatsuya Arao, Shunpei Yamazaki
Life of this patent
Estimating the term…
Abstract
A technique to control segregation of impurities when reforming crystallinity and crystallization of a semiconductor film by using a laser beam irradiation is provided. The present invention is to irradiate the substrate with applying ultrasonic vibration while keeping the end portion of the substrate in space. The substrate on which a semiconductor film is formed is kept onto the stage provided with opening pores, and floated by spouting gas from opening pores. Supersonic vibration can be efficiently provided to the substrate by irradiating with a laser beam with ultrasonic vibration while keeping the end portion of the substrate.
Claims25
A method for fabricating a semiconductor film comprising:
- irradiating a semiconductor film formed over a substrate with a laser beam to crystallize the semiconductor film,
- wherein ultrasonic vibration is applied to the substrate during irradiating the laser beam while holding an end portion of the substrate.
A method for fabricating a semiconductor film comprising:
- holding a substrate over a stage having pores wherein said substrate is provided with a semiconductor film;
- spouting gases from the pores to float the substrate;
- and
- irradiating a semiconductor film formed over the substrate with a laser beam while holding an end portion of the substrate,
- wherein during irradiating the laser beam, ultrasonic vibration is applied to the substrate.
A method for fabricating a semiconductor device comprising:
- forming a semiconductor film having an amorphous structure over a substrate;
- and
- irradiating the semiconductor film with a laser beam while applying ultrasonic vibration to the substrate to crystallize the semiconductor film.
A method for fabricating a semiconductor device comprising:
- forming a semiconductor film having an amorphous structure over a substrate;
- and
- irradiating the semiconductor film with a laser beam condensed into a linear shape in an oxygen atmosphere while floating the substrate and applying ultrasonic vibration to the substrate to crystallize the semiconductor film.
A method for fabricating a semiconductor device comprising:
- forming a semiconductor film having an amorphous structure over a substrate;
- irradiating the semiconductor film with a laser beam condensed into a linear shape while applying ultrasonic vibration to the substrate to crystallize the semiconductor film;
- and
- crystallizing a whole surface of the semiconductor film while overlapping a beam spot of the laser beam on the film.
A method for fabricating a semiconductor device comprising:
- forming a semiconductor film having an amorphous structure over a substrate;
- crystallizing the semiconductor film having an amorphous structure by adding a metal element or a metal compound having catalytic action for enhancing a crystallization of the semiconductor film and by heat-treating;
- and
- irradiating the semiconductor film with a laser beam condensed into a linear shape while floating the substrate and applying ultrasonic vibration to the substrate in order to improve a crystallinity of the semiconductor film.
A method for fabricating a semiconductor device comprising:
- forming a semiconductor film having an amorphous structure over a substrate;
- crystallizing the semiconductor film having the amorphous structure by adding a metal element or a metal compound having catalytic action for enhancing a crystallization of the semiconductor film and by heat-treating;
- irradiating the semiconductor film with a laser beam condensed into a linear beam while applying ultrasonic vibration to the substrate in order to improve a crystallinity of the semiconductor film;
- and
- improving a crystallinity of the semiconductor film while overlapping a beam spot of the laser beam on the film.
A laser processing apparatus comprising:
- a means for floating and transporting a substrate in a horizontal direction;
- an optical system for condensing a laser beam into a linear shape or a rectangular shape;
- and
- a means for applying ultrasonic vibration to the substrate.
A laser processing apparatus comprising:
- a means for transporting a substrate in a horizontal direction by a means for holding its end portion and moving in one direction and a means for floating the substrate;
- an optical system for condensing and irradiating the semiconductor film with a laser beam to the substrate;
- and
- a means for applying ultrasonic vibration to the substrate from a region for holding the substrate.
Dependencies are inferred from the claim text.