Process for forming polysilicon layer and fabrication of thin film transistor by the process
AssigneeAu Optronics Corporation
InventorsChia-Tien Peng, Long-Sheng Liao, Yi-Chang Tsao
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Abstract
A process for forming a polysilicon layer. First, an amorphous silicon layer is formed. Next, the amorphous silicon layer is pre-treated such that a surface of the amorphous silicon layer is oxidized to a silicon oxide layer or nitridized to a silicon nitride layer. Next, the amorphous silicon layer is crystallized to form a polysilicon layer. TFT fabricated by the present invention has smaller Vt and higher electron mobility.
Claims30
A process for forming a polysilicon layer, comprising the following steps:
- forming an amorphous silicon layer;
- pre-treating the amorphous silicon layer such that a surface of the amorphous silicon layer is oxidized to a silicon oxide layer or nitridized to a silicon nitride layer;
- and
- crystallizing the amorphous silicon layer to form a polysilicon layer.
A process for fabricating a polysilicon thin film transistor, comprising the following steps:
- forming an amorphous silicon layer on a substrate;
- pre-treating the amorphous silicon layer such that a surface of the amorphous silicon layer is oxidized to a silicon oxide layer or nitridized to a silicon nitride layer;
- crystallizing the amorphous silicon layer to form a polysilicon layer as an active layer;
- and
- forming a gate dielectric layer, a gate, a source region and a drain region.
Dependencies are inferred from the claim text.