Integrated driver process flow
AssigneeSilicon Light Machines Corporation
InventorsJames A. Hunter, Charles B. Roxlo, Alexander Payne
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Abstract
An integrated device includes one or more device drivers and a micro-electro-mechanical system (MEMS) structure monolithically coupled to the one or more device drivers. The one or more device drivers are configured to process received control signals and to transmit the processed control signals to the MEMS structure. Methods of fabricating integrated devices are also disclosed.
Claims20
A method of fabricating an integrated device, the method comprising:
- forming a transistor of an integrated device;
- forming a first protective layer over the transistor;
- and
- forming a micro-electro-mechanical system (MEMS) structure over the first protective layer, the MEMS structure including a movable element that is formed using a deposition process at a temperature of at least about 700° C.
A method of fabricating an integrated device, the method comprising:
- forming a plurality of transistors of an integrated device;
- forming a capacitive micromachined ultrasonic transducer (CMUT), the CMUT including a membrane that is formed using a high temperature process, the plurality of transistors and the CMUT being formed on a same substrate;
- and
- forming an interconnect line electrically coupling the CMUT and a transistor in the plurality of transistors.
A capacitive micromachined ultrasonic transducer (CMUT), the CMUT comprising:
- a transistor under a protective layer;
- a bottom electrode over the protective layer;
- and
- a movable membrane over the bottom electrode, the membrane and the bottom electrode being separated by a gap, and wherein the transistor and the membrane are formed on a same substrate.
Dependencies are inferred from the claim text.