Method of accelerating test of semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsKenji Yoshida, Hiroshi Nakazawa, Takeshi Fujimaki, Koji Miyamoto
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Abstract
Semiconductor elements composing a semiconductor device are formed on a semiconductor substrate. Wirings composed of copper or an alloy mainly composed of copper are formed in wiring layers through interlayer insulation films to connect the semiconductor elements to each other. When the wirings are formed, a temperature of the wirings is held in a first temperature zone covering 40° C. of a temperature at which a stress migration is most accelerated.
Claims20
A testing method for a semiconductor device, having wirings composed of copper or an alloy mainly composed of copper, comprising:
- executing an acceleration test for eliminating an initial failure of the wirings due to stress migration;
- and
- checking whether or not the wirings are broken.
A manufacturing method for a semiconductor device comprising:
- forming semiconductor elements configured to implement the semiconductor device on a semiconductor substrate;
- and
- forming wirings composed of copper or an alloy mainly composed of copper in wiring layers through interlayer insulation films to connect the semiconductor elements to each other, wherein the forming of the wirings comprises holding a temperature of the wirings in a first temperature zone covering ±40° C. of a temperature at which a stress migration is most accelerated.
A manufacturing method for a semiconductor device comprising:
- forming semiconductor elements configured to implement the semiconductor device on a semiconductor substrate;
- and
- forming wirings composed of copper or an alloy mainly composed of copper in wiring layers through interlayer insulation films to connect the semiconductor elements to each other,
- wherein the forming of the wirings comprises increasing and decreasing the temperature of the semiconductor device in a second temperature zone covering ±40° C. of a reference temperature set in a first temperature zone covering ±40° C. of a temperature at which the stress migration is most accelerated.
Dependencies are inferred from the claim text.