Silicon-containing polymer, negative type resist composition comprising the same, and patterning method for semiconductor device using the same
AssigneeSamsung Electronics Co., Ltd.
InventorSang-Jun Choi
Life of this patent
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Abstract
A polymer used for a negative type resist composition having a first repeating unit of a Si-containing monomer unit, a second repeating unit having a hydroxy group or an epoxy ring and copolymerized with the first repeating unit is provided. The first repeating unit is represented by the following formula: 1 wherein R1 is a hydrogen atom or a methyl group, X is a C1-C4 alkyl or alkoxy group, and n is an integer from 2 to 4. Also, there is provided a negative type resist composition including the polymer which is an alkali soluble base polymer, a photoacid generator and a crosslinking agent cross linkable in the presence of an acid.
Claims63
A polymer used for a negative type resist composition, represented by the following formula:
- 17
- wherein R1 is a hydrogen and a methyl group, R2 is a C2˜C8 alkyl group having a hydroxy group, R3 is a hydrogen atom or methyl group, X is a C1-C4 alkyl or alkoxy group, n is an integer from 2 to 4, and q/(p+q) is about 0.1 to about 0.5.
A polymer used for a negative type resist composition, represented by the following formula:
- 18
- wherein R1 is a hydrogen atom or a methyl group, R2 is a hydrogen atom or methyl group, X is a C1-C4 alkyl or alkoxy group, n is an integer from 2 to 4, and q/(p+q) is about 0.1 to about 0.5.
A negative type resist composition comprising:
- (a) an alkali soluble base polymer having a first repeating unit represented by the following formula:
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- wherein R1 is a hydrogen atom or a methyl group, X is a C1-C4 alkyl or alkoxy group, and n is an integer from 2 to 4;
- (b) a photoacid generator (PAG);
- and
- (c) a crosslinking agent cross linkable by reacting with an acid.
A negative type resist composition comprising:
- (a) an alkali soluble base polymer represented by the following formula:
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- wherein R1 is a hydrogen atom or a methyl group, R2 is a C2-C8 alkyl group, R3 is a hydrogen atom or a methyl group, X is a C1-C4 alkyl or alkoxy group, n is an integer from 2 to 4 and q/(p+q) is about 0.1 to about 0.5;
- (b) a photoacid generator (PAG);
- and
- (c) a crosslinking agent formed of a compound having an epoxy ring and cross linkable by reacting with an acid.
A negative type resist composition comprising:
- (a) an alkali soluble base polymer represented by the following formula:
- 23
- wherein R1 is a hydrogen atom or a methyl group, R2 is a hydrogen atom or a methyl group, X is a C1-C4 alkyl or alkoxy group, n is an integer from 2 to 4, and q/(p+q) is about 0.1 to about 0.5;
- (b) a photoacid generator (PAG);
- and
- (c) a crosslinking agent formed of a compound having a hydroxy group and cross linkable by reacting with an acid.
A patterning method for a semiconductor device comprising:
- (a) forming a first resist layer on a layer to be etched on a semiconductor substrate;
- (b) forming a second resist layer by coating a negative type resist composition comprising an alkali soluble base polymer represented by the following formula:
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- wherein R1 is a hydrogen atom or a methyl group, R2 is a C2-C8 alkyl group, R3 is a hydrogen atom or a methyl group, X is a C1-C4 alkyl or alkoxy group, n is an integer from 2 to 4 and q/(p+q) is about 0.1 to about 0.5, a photoacid generator (PAG), and a crosslinking agent formed of a compound having an epoxy ring and cross linkable by reacting with an acid;
- (c) pre-baking the second resist layer;
- (d) exposing the second resist layer to light;
- (e) performing post-exposure baking (PEB) on the exposed second resist layer;
- (f) forming a second resist layer pattern by developing the exposed second resist layer;
- (g) forming a first resist layer pattern by etching the first resist layer using the second resist layer pattern as an etching mask;
- and
- (h) etching the layer to be etched using the first resist layer pattern as an etching mask.
A patterning method for a semiconductor device comprising:
- (a) forming a first resist layer on a layer to be etched on a semiconductor substrate;
- (b) forming a second resist layer by coating a negative type resist composition comprising an alkali soluble base polymer represented by the following formula:
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- wherein R1 is a hydrogen atom or a methyl group, R2 is a hydrogen atom or methyl group, X is a C1-C4 alkyl or alkoxy group, n is an integer from 2 to 4, and q/(p+q) is about 0.1 to about 0.5, a photoacid generator (PAG), and a crosslinking agent formed of a compound having a hydroxy group and cross linkable by reacting with an acid;
- (c) pre-baking the second resist layer;
- (d) exposing the second resist layer to light;
- (e) performing post-exposure baking (PEB) on the exposed second resist layer;
- (f) forming a second resist layer pattern by developing the exposed second resist layer;
- (g) forming a first resist layer pattern by etching the first resist layer using the second resist layer pattern as an etching mask;
- and
- (h) etching the layer to be etched using the first resist layer pattern as an etching mask.
Dependencies are inferred from the claim text.