Microwave tunable device having ferroelectric/dielectric BST film

Abstract

Provided is a microwave tunable device including a ferroelectric/dielectric (Ba1-x,Srx)TiO3 (BST) thin film that can reduce dielectric loss of a ferroelectric/dielectric BST thin film. The microwave tunable device of the present research includes: a substrate; and a ferroelectric/dielectric (Ba1-x,Srx)TiO3 (BST) thin film of a (111) direction which is formed on the substrate. The technology of this research embodies a microwave tunable device by using a ferroelectric/dielectric BST thin film grown in the (111) direction to overcome the limitation of conventional technologies and improve the problem of dielectric loss.

Dependencies are inferred from the claim text.