US 2004/0105935 A1Published application

Method of depositing thin film using hafnium compound

AssigneeIPS Corporation

InventorsYoung Hoon Park, Cheol Hyun Ahn, Sang Jin Lee, Byoung Cheol Cho, Sang Kwon Park, Hong Joo Lim, Sang Kyu Lee, Jang Ho Bae

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Abstract

Provided is a method of depositing a thin film using a hafnium compound. In this method, the depositing (S200) of a thin film includes (S20) depositing a primary thin film and (S21) depositing a secondary thin film. Step (S200) is performed by repeating steps (S20) and (S21) once or more. Step (S20) includes (S20-1) feeding a first reactive gas, (S20-2) purging the first reactive gas, (S20-3) feeding a third reactive gas, and (S20-4) purging the third reactive gas. Step (S21) includes (S21-1) feeding a second reactive gas, (S21-2) purging the second reactive gas, (S21-3) feeding the third reactive gas, and (S21-4) purging the third reactive gas. Step (S20) is performed by repeating steps (S20-1), (S20-2), (S20-3), and (S20-4) N times, and step (S21) is performed by repeating steps (S21-1), (S21-2), (S21-3), and (S21-4) M times.

Claims12

Dependent claims

A method of depositing a thin film using a hafnium compound on a wafer, the thin film being formed of HfSixOy using a reaction chamber comprising a reactor block in which a wafer block is received;

a top lid for covering the reactor block to maintain a predetermined pressure;
and a shower head installed under the top lid and including a plurality of first spray holes for spraying a first reactive gas on the wafer, a plurality of second spray holes for spraying a second reactive gas on the wafer, and a plurality of third spray holes for spraying a third reactive gas on the wafer, the method comprising:
(S100) mounting the wafer on the wafer block;
and
(S200) depositing the HfSixOy film by spraying reactive gases on the wafer, step (S200) comprising:
(S20) depositing a primary thin film;
and
(S21) depositing a secondary thin film,
step (S200) being performed by repeating step (S20) and step (S21) once or more,
step (S20) comprising:
(S20-1) feeding the first reactive gas by spraying TEMAH(Hf((C2H5)(CH3)N)4)) as the first reactive gas on the wafer through the first spray holes;
(S20-2) purging the first reactive gas by spraying an inert gas through all the spray holes of the shower head;
(S20-3) feeding the third reactive gas by spraying one of O3 and H2O as the third reactive gas on the wafer through the third spray holes;
and
(S20-4) purging the third reactive gas by spraying the inert gas through all the spray holes of the shower head,
step (S20) being performed by repeating steps (S20-1), (S20-2), (S20-3), and (S20-4) N times,
step (S21) comprising:
(S21-1) feeding the second reactive gas by spraying one of TMDSO(O(Si(CH3)2H)2) and HMDS((CH3)3)Si)2) as the second reactive gas on the wafer through the second spray holes;
(S21-2) purging the second reactive gas by spraying the inert gas through all the spray holes of the shower head;
(S21-3) feeding the third reactive gas by spraying one of O3 and H2O on the wafer through the third spray holes;
and
(S21-4) purging the third reactive gas by spraying the inert gas is sprayed through all the spray holes of the shower head,
step (S21) being performed by repeating steps (S21-1), (S21-2), (S21-3), and (S21-4) M times,
wherein while a corresponding reactive gas is being sprayed through one of the first spray holes, the second spray holes, and the third spray holes, the inert gas is sprayed through the other two types of spray holes.

21 more elements

A method of depositing a thin film using a hafnium compound on a wafer, the thin film being formed of HfO2 using a reaction chamber comprising a reactor block in which a wafer block is received;

a top lid for covering the reactor block to maintain a predetermined pressure;
and a shower head installed under the top lid and including a plurality of first spray holes for spraying a first reactive gas on the wafer, a plurality of second spray holes for spraying a second reactive gas on the wafer, and a plurality of gas curtain holes for spraying an inert gas toward the inner sidewalls of the reactor block so as to minimize deposition of the thin film on the inner sidewalls of the reactor block, the method comprising:
(S1) mounting the wafer on the wafer block;
and
(S2) depositing the HfO2 film by spraying reactive gases on the wafer,
step (S2) being performed while the inert gas is being sprayed through the gas curtain holes toward the inner sidewalls of the reactor block so as to minimize deposition of the thin film on the inner sidewalls of the reactor block,
step (S2) comprising:
(S2-1) feeding the first reactive gas by spraying TEMAH (Hf((C2H5)(CH3)N)4)) as the first reactive gas on the wafer through the first spray holes;
(S2-2) purging the first reactive gas by spraying the inert gas through all the spray holes of the shower head;
(S2-3) feeding the second reactive gas by spraying one of O3 and H2O as the second reactive gas on the wafer through the second spray holes;
and
(S2-4) purging the second reactive gas by spraying the inert gas through all the spray holes of the shower head,
step (S2) being performed by repeating steps (S2-1), (S2-2), (S2-3), and (S2-4) once or more,
wherein while a corresponding reactive gas is being sprayed through one of the first spray holes and the second spray holes, the inert gas is sprayed through the other type of spray holes.

11 more elements

Dependencies are inferred from the claim text.

Facts

Application: 10/712,876Filed 12 Nov 2003
Priority: KR 2002-7005412 Nov 2002
Published: 3 Jun 2004
Term ends: Not estimatedThe source records don’t support an estimate.

Classification7 codes

C23C 16/405
Oxides: of refractory metals or yttrium
C23C 16/40
Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides: oxides
C23C 16/45519
Characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber: inert gas curtains
C23C 16/45529
Characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures…